PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
28 September 2017
Product data sheet
1. General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8540X
2. Features and benefits
• High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • AEC-Q101 qualified
3. Applications
• Electronic ballast for fluorescent lighting • LED driver for LED chain module • LCD backlighting • High Intensity Discharge (HID) front lighting • Automotive motor management • Hook switch for wired telecom • Switch mode power supply
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter voltage
IC collector current
ICM peak collector current
hFE DC current gain
RCEsat
col.