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PBHV3160Z Dataheets PDF



Part Number PBHV3160Z
Manufacturers nexperia
Logo nexperia
Description PNP Transistor
Datasheet PBHV3160Z DatasheetPBHV3160Z Datasheet (PDF)

PBHV3160Z 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 18 August 2014 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC • High collector current gain hFE at high IC • AEC-Q101 qualified 3. Applications • E.

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PBHV3160Z 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 18 August 2014 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC • High collector current gain hFE at high IC • AEC-Q101 qualified 3. Applications • Electronic ballast for fluorescent lighting • LED driver for LED chain module • LCD backlighting • HID front lighting • Automotive motor management • Hook switch for wired telecom • Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain Conditions open base VCE = -10 V; IC = -10 mA; Tamb = 25 °C Min Typ Max Unit - - -600 V - - -0.1 A 70 130 - Nexpe.


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