Document
PBHV3160Z
600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor
18 August 2014
Product data sheet
1. General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC • High collector current gain hFE at high IC • AEC-Q101 qualified
3. Applications
• Electronic ballast for fluorescent lighting • LED driver for LED chain module • LCD backlighting • HID front lighting • Automotive motor management • Hook switch for wired telecom • Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1. Symbol VCEO
IC hFE
Quick reference data Parameter collector-emitter voltage
collector current
DC current gain
Conditions open base
VCE = -10 V; IC = -10 mA; Tamb = 25 °C
Min Typ Max Unit - - -600 V
- - -0.1 A 70 130 -
Nexpe.