PHPT60415PY
40 V, 15 A PNP high power bipolar transistor
15 January 2019
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power
plastic package.
NPN complement: PHPT60415NY
2. Features and benefits
• High thermal power dissipation capability
• High temperature applications up to 175 °C
• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified.
3. Applications
• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting applications
• Motor drive
• Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter
voltage
IC
ICM
RCEsat
collector current
peak collector current
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
IC = -15 A; IB = -1.5 A; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - -40 V
- - -15 A
- - -30 A
- 25 57 mΩ
