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PNP Transistor. PHPT60415PY Datasheet |
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PHPT60415PY
40 V, 15 A PNP high power bipolar transistor
15 January 2019
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power
plastic package.
NPN complement: PHPT60415NY
2. Features and benefits
• High thermal power dissipation capability
• High temperature applications up to 175 °C
• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified.
3. Applications
• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting applications
• Motor drive
• Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter
voltage
IC
ICM
RCEsat
collector current
peak collector current
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
IC = -15 A; IB = -1.5 A; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - -40 V
- - -15 A
- - -30 A
- 25 57 mΩ
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Nexperia
PHPT60415PY
40 V, 15 A PNP high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 E emitter
3 E emitter
4 B base
mb C
collector
Simplified outline
mb
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
C
B
E
sym132
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PHPT60415PY
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PHPT60415PY
Marking code
0415PAB
PHPT60415PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 January 2019
© Nexperia B.V. 2019. All rights reserved
2 / 13
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Nexperia
PHPT60415PY
40 V, 15 A PNP high power bipolar transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
open emitter
open base
open collector
single pulse; tp ≤ 1 ms
pulsed; tp ≤ 1 ms
Tamb ≤ 25 °C
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
Min Max Unit
- -40 V
- -40 V
- -8 V
- -15 A
- -30 A
- -1.5 A
- -3 A
[1] -
1.5 W
[2] -
3.7 W
[3] -
5W
[4] -
25 W
- 175 °C
-55 175 °C
-65 175 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit Board ( PCB), single-sided copper, tin-plated mounting pad for collector 6 cm2.
[3] Device mounted on an ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[4] Power dissipation from junction to mounting base.
6 aaa-016569
Ptot (1)
(W)
4 (2)
2
(3)
0
-75 25
Fig. 1.
(1)
(2)
CFRer4aPmCicBP, CmBo,uAnlt2inOg3,psatdanfodracrdolfleocottoprri6ntcm2
(3) FR4 PCB, standard footprint
Power derating curves
125 225
Tamb (°C)
PHPT60415PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 January 2019
© Nexperia B.V. 2019. All rights reserved
3 / 13
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