PNP Transistor. PHPT60610PY Datasheet

PHPT60610PY Transistor. Datasheet pdf. Equivalent

Part PHPT60610PY
Description PNP Transistor
Feature PHPT60610PY 60 V, 10 A PNP high power bipolar transistor 15 January 2019 Product data sheet 1. G.
Manufacture nexperia
Datasheet
Download PHPT60610PY Datasheet



PHPT60610PY
PHPT60610PY
60 V, 10 A PNP high power bipolar transistor
15 January 2019
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power
plastic package.
NPN complement: PHPT60610NY
2. Features and benefits
High thermal power dissipation capability
High temperature applications up to 175 °C
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified.
3. Applications
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Motor drive
Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter
voltage
IC
ICM
RCEsat
collector current
peak collector current
collector-emitter
saturation resistance
Conditions
open base
pulsed; tp ≤ 1 ms
IC = -10 A; IB = -1 A; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - -60 V
- - -10 A
- - -20 A
- 29 47 mΩ



PHPT60610PY
Nexperia
PHPT60610PY
60 V, 10 A PNP high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 E emitter
3 E emitter
4 B base
mb C
collector
Simplified outline
mb
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
C
B
E
sym132
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PHPT60610PY
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PHPT60610PY
Marking code
0610PAB
PHPT60610PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 January 2019
© Nexperia B.V. 2019. All rights reserved
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