PHPT61002NYC
100V, 2 A NPN high power bipolar transistor
9 January 2014
Product data sheet
1. General description
NP...
PHPT61002NYC
100V, 2 A
NPN high power bipolar
transistor
9 January 2014
Product data sheet
1. General description
NPN high power bipolar
transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT61002PYC
2. Features and benefits
High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to
transistors in DPAK High energy efficiency due to less heat generation
3. Applications
Load switch Power management Linear mode voltage
regulator Backlighting apllications
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions
collector-emitter voltage
open base
collector current
peak collector current single pulse; tp ≤ 1 ms
collector-emitter saturation resistance
IC = 2 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit - - 100 V
- - 2A - ...