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NPN/NPN Transistor. PHPT610030NK Datasheet |
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PHPT610030NK
NPN/NPN high power double bipolar transistor
20 October 2014
Product data sheet
1. General description
NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-
Mounted Device (SMD) power plastic package.
PNP/PNP complement: PHPT610030PK.
NPN/PNP complement: PHPT610030NPK.
2. Features and benefits
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Motor control
• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting applications
• Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
IC = 3 A; IB = 0.3 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - 100 V
- - 3A
- 75 110 mΩ
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Nexperia
PHPT610030NK
NPN/NPN high power double bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E1 emitter TR1
2 B1 base TR1
3 E2 emitter TR2
4 B2 base TR2
5 C2 collector TR2
6 C2 collector TR2
7 C1 collector TR1
8 C1 collector TR1
Simplified outline
8765
Graphic symbol
C1 B2 E2
TR2
TR1
1234
LFPAK56D (SOT1205)
E1 B1 C2
sym140
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PHPT610030NK
LFPAK56D
Description
Plastic single ended surface mounted package (LFPAK56D); 8
leads
Version
SOT1205
7. Marking
Table 4. Marking codes
Type number
PHPT610030NK
Marking code
10030NK
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IB base current
PHPT610030NK
All information provided in this document is subject to legal disclaimers.
Product data sheet
20 October 2014
Min Max Unit
- 100 V
- 100 V
- 7V
- 3A
- 8A
- 0.5 A
© Nexperia B.V. 2017. All rights reserved
2 / 15
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Nexperia
PHPT610030NK
NPN/NPN high power double bipolar transistor
Symbol
Ptot
Per device
Ptot
Tj
Tstg
Tamb
Parameter
total power dissipation
Conditions
Tamb ≤ 25 °C
Min Max Unit
[1] -
1W
[2] -
2.4 W
[3] -
25 W
total power dissipation
junction temperature
storage temperature
ambient temperature
Tamb ≤ 25 °C
[1] -
1.25 W
[4] -
5W
[2] -
3W
- 175 °C
-65 175 °C
-55 175 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Power dissipation from junction to mounting base.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
4
Ptot
(W)
3
aaa-014341
(1)
2
1
(2)
0
-75 0
Fig. 1.
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, standard footprint
Per transistor: power derating curves
75
150 225
Tamb (°C)
PHPT610030NK
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 October 2014
© Nexperia B.V. 2017. All rights reserved
3 / 15
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