PHPT610030NK

PHPT610030NK NPN/NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) SurfaceMounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK. NPN/PNP complement: PHPT610030NPK. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications Motor control Power management Load switch Linear mode voltage regulator Backlighting applications Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per transistor VCEO collector-emitter voltage IC collector current Per transistor RCEsat collector-emitter saturation resistance Conditions open base IC ...