PHPT610030NK
NPN/NPN high power double bipolar transistor
20 October 2014
Product data sheet
1. General description
NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-
Mounted Device (SMD) power plastic package.
PNP/PNP complement: PHPT610030PK.
NPN/PNP complement: PHPT610030NPK.
2. Features and benefits
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Motor control
• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting applications
• Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
IC = 3 A; IB = 0.3 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - 100 V
- - 3A
- 75 110 mΩ
