NPN Transistor. PHPT61006NY Datasheet

PHPT61006NY Transistor. Datasheet pdf. Equivalent


nexperia PHPT61006NY
PHPT61006NY
100 V, 6 A NPN high power bipolar transistor
26 January 2015
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted
Device (SMD) power plastic package.
PNP complement: PHPT61006PY
2. Features and benefits
High thermal power dissipation capability
High temperature applications up to 175 °C
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified.
3. Applications
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Motor drive
Relay replacement
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current single pulse; tp ≤ 1 ms
collector-emitter
saturation resistance
IC = 6 A; IB = 600 mA; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
Min Typ Max Unit
- - 100 V
- - 6A
- - 12 A
- 35 57 mΩ


PHPT61006NY Datasheet
Recommendation PHPT61006NY Datasheet
Part PHPT61006NY
Description NPN Transistor
Feature PHPT61006NY; PHPT61006NY 100 V, 6 A NPN high power bipolar transistor 26 January 2015 Product data sheet 1. G.
Manufacture nexperia
Datasheet
Download PHPT61006NY Datasheet




nexperia PHPT61006NY
Nexperia
PHPT61006NY
100 V, 6 A NPN high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 E emitter
3 E emitter
4 B base
mb C
collector
Simplified outline
mb
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
C
B
E
sym123
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PHPT61006NY
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PHPT61006NY
Marking code
1006NAB
PHPT61006NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 January 2015
© Nexperia B.V. 2017. All rights reserved
2 / 15



nexperia PHPT61006NY
Nexperia
PHPT61006NY
100 V, 6 A NPN high power bipolar transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IB base current
IBM peak base current
single pulse; tp ≤ 1 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
Min Max Unit
- 100 V
- 100 V
- 7V
- 6A
- 12 A
- 1A
- 2A
[1] -
1.3 W
[2] -
3.3 W
[3] -
5W
[4] -
25 W
- 175 °C
-55 175 °C
-65 175 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm2.
[3] Device mounted on an ceramic PCB; Al2O3, standard footprint.
[4] Power dissipation from junction to mounting base.
PHPT61006NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 January 2015
© Nexperia B.V. 2017. All rights reserved
3 / 15







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