PNP Transistor. PHPT61002PYC Datasheet

PHPT61002PYC Transistor. Datasheet pdf. Equivalent


nexperia PHPT61002PYC
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
10 January 2014
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device
(SMD) power plastic package.
NPN complement: PHPT61002NYC.
2. Features and benefits
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
3. Applications
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current tp ≤ 1 ms; pulsed
collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -100 V
- - -2 A
- - -6 A
- 125 200 mΩ


PHPT61002PYC Datasheet
Recommendation PHPT61002PYC Datasheet
Part PHPT61002PYC
Description PNP Transistor
Feature PHPT61002PYC; PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. .
Manufacture nexperia
Datasheet
Download PHPT61002PYC Datasheet




nexperia PHPT61002PYC
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 E emitter
3 E emitter
4 B base
mb C
collector
Simplified outline
mb
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
C
B
E
sym132
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PHPT61002PYC
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PHPT61002PYC
Marking code
1002PCA
PHPT61002PYC
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 January 2014
© Nexperia B.V. 2017. All rights reserved
2 / 15



nexperia PHPT61002PYC
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current
ICM
peak collector current
tp ≤ 1 ms; pulsed
IB base current
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
Min Max Unit
- -100 V
- -100 V
- -8 V
- -2 A
- -6 A
- -0.5 A
[1] -
1.25 W
[2] -
3W
[3] -
5W
[4] -
25 W
- 175 °C
-55 175 °C
-65 175 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[4] Power dissipation from junction to mounting base.
8
Ptot
(W)
6
aaa-010424
(1)
4
(2)
2
(3)
0
-75 25
Fig. 1.
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Power derating curves
125 225
Tamb (°C)
PHPT61002PYC
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 January 2014
© Nexperia B.V. 2017. All rights reserved
3 / 15







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