PNP Transistor. PHPT61010PY Datasheet

PHPT61010PY Transistor. Datasheet pdf. Equivalent


nexperia PHPT61010PY
PHPT61010PY
100 V, 10 A PNP high power bipolar transistor
20 March 2015
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device
(SMD) power plastic package.
NPN complement: PHPT61010NY.
2. Features and benefits
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Motor drive
Relay replacement
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current tp ≤ 1 ms; single pulse
collector-emitter
saturation resistance
IC = -10 A; IB = -1 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
Min Typ Max Unit
- - -100 V
- - -10 A
- - -20 A
- 53 80 mΩ


PHPT61010PY Datasheet
Recommendation PHPT61010PY Datasheet
Part PHPT61010PY
Description PNP Transistor
Feature PHPT61010PY; PHPT61010PY 100 V, 10 A PNP high power bipolar transistor 20 March 2015 Product data sheet 1. Ge.
Manufacture nexperia
Datasheet
Download PHPT61010PY Datasheet




nexperia PHPT61010PY
Nexperia
PHPT61010PY
100 V, 10 A PNP high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 E emitter
3 E emitter
4 B base
mb C
collector
Simplified outline
mb
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
C
B
E
sym132
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PHPT61010PY
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PHPT61010PY
Marking code
1010PAB
PHPT61010PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 March 2015
© Nexperia B.V. 2017. All rights reserved
2 / 16



nexperia PHPT61010PY
Nexperia
PHPT61010PY
100 V, 10 A PNP high power bipolar transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current
ICM
peak collector current
tp ≤ 1 ms; single pulse
IB base current
IBM peak base current
tp ≤ 1 ms; pulsed
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
Min Max Unit
- -100 V
- -100 V
- -8 V
- -10 A
- -20 A
- -1 A
- -2 A
[1] -
1.5 W
[2] -
3.7 W
[3] -
5W
[4] -
25 W
- 175 °C
-55 175 °C
-65 175 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 Printed-Circuit Board ( PCB), single-sided copper, tin-plated mounting pad for
collector 6 cm2.
[3] Device mounted on an ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[4] Power dissipation from junction to mounting base.
PHPT61010PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 March 2015
© Nexperia B.V. 2017. All rights reserved
3 / 16







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