PHPT610035NK

PHPT610035NK NPN/NPN high power double bipolar transistor 10 September 2020 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK. PNP/PNP complement: PHPT610035PK NPN/PNP complement: PHPT610035NPK 2. Features and benefits Current gain matching 5% High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications Current mirror Motor control Power management Backlighting applications Relay replacement differential amplifiers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per transistor VCBO collector-base voltage IC collector current RCEsat collector-emitter saturation resistance Conditions open emitter IC = 3 A; IB = 300 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C Min Typ Max Unit - - 100 V - - 3 A - 75 110 mΩ Nexperia PHPT610035NK NPN/NPN high power double bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E1 emitter TR1 2 B1 base TR1 3 E2 emitter TR2 4 B2 base TR2 5 C2 collector TR2 6 C2 collector TR2 7 C1 collector TR1 8 C1 collector TR1 Simplified outline 8765 1234 LFPAK56D; Dual LFP...