NPN/NPN Transistor. PHPT610035NK Datasheet

PHPT610035NK Transistor. Datasheet pdf. Equivalent


nexperia PHPT610035NK
PHPT610035NK
NPN/NPN high power double bipolar transistor
14 October 2014
Product data sheet
1. General description
NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-
Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK.
PNP/PNP complement: PHPT610035PK.
NPN/PNP complement: PHPT610035NPK.
2. Features and benefits
Current gain matching 5%
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
Current mirror
Motor control
Power management
Backlighting applications
Relay replacement
differential amplifiers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
IC = 3 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - 100 V
- - 3A
- 75 110 mΩ


PHPT610035NK Datasheet
Recommendation PHPT610035NK Datasheet
Part PHPT610035NK
Description NPN/NPN Transistor
Feature PHPT610035NK; PHPT610035NK NPN/NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. .
Manufacture nexperia
Datasheet
Download PHPT610035NK Datasheet




nexperia PHPT610035NK
Nexperia
PHPT610035NK
NPN/NPN high power double bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E1 emitter TR1
2 B1 base TR1
3 E2 emitter TR2
4 B2 base TR2
5 C2 collector TR2
6 C2 collector TR2
7 C1 collector TR1
8 C1 collector TR1
Simplified outline
8765
Graphic symbol
C1 B2 E2
TR2
TR1
1234
LFPAK56D (SOT1205)
E1 B1 C2
sym140
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PHPT610035NK
LFPAK56D
Description
Plastic single ended surface mounted package (LFPAK56D); 8
leads
Version
SOT1205
7. Marking
Table 4. Marking codes
Type number
PHPT610035NK
Marking code
10035NK
PHPT610035NK
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 October 2014
© Nexperia B.V. 2017. All rights reserved
2 / 16



nexperia PHPT610035NK
Nexperia
PHPT610035NK
NPN/NPN high power double bipolar transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IB base current
Ptot
total power dissipation
Tamb ≤ 25 °C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
Tstg
Tamb
junction temperature
storage temperature
ambient temperature
Min Max Unit
-
-
-
-
-
-
[1] -
[2] -
[3] -
100 V
100 V
7V
3A
8A
0.5 A
1W
2.4 W
25 W
[1] -
1.25 W
[4] -
5W
[2] -
3W
- 175 °C
-65 175 °C
-55 175 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Power dissipation from junction to mounting base.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
PHPT610035NK
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 October 2014
© Nexperia B.V. 2017. All rights reserved
3 / 16







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