ZENER DIODES. MM1Z5267B Datasheet

MM1Z5267B DIODES. Datasheet pdf. Equivalent

Part MM1Z5267B
Description SILICON PLANAR ZENER DIODES
Feature   MM1Z5221B thru MM1Z5267B          SILICON PLANAR ZENER DIODES Silicon planar zener diode in a .
Manufacture CUMSUMI
Total Page 4 Pages
Datasheet
Download MM1Z5267B Datasheet



MM1Z5267B
 
MM1Z5221B thru MM1Z5267B
 
  
 
 
SILICON PLANAR ZENER DIODES
Silicon planar zener diode in a small plastic
  SMD SOD-123FL package
 
 
 
 
 
Features
 
z Total power dissipation: max. 500 mW
 
z Small plastic package suitable for
 
z surface mounted design
 
z Wide variety of voltage ranges:
 
nom.2.0 to 75V
 
z Tolerance approximately + / - 5%
 
 
 
 
 
Absolute Maximum Ratings (Ta = 25oC)
 
 
Symbol
Pb Free Plating Product
 
 
 
 
 
 
 
 
 
Cathode
SOD-123 Flat Lead
Anode
ELECTRICAL SYMBOL
Value
Unit
Zener Current see Table “Characteristics”
 
 
 
Power Dissipation
Junction Temperature
Storage Temperature Range
 
 
 
 
Characteristics at Tamb = 25oC
 
 
 
Symbol
 
Thermal Resistance
Junction to Ambient Air
 
RthA
Ptot 500 mW
Tj 150 OC
TS -55 to +150 OC
 
Min. Typ. Max. Unit
 
- - 0.3 K/mW
Forward Voltage
at IF = 10mA
 
VF
-
 
- 0.9 V
®
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® www.cumsumi.com
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MM1Z5267B
 
MM1Z5221B thru MM1Z5267B
 
 
Characteristics at Ta = 25 OC
 
  
 
Type
Marking
Code
Zener Voltage Range 1)
Vznom
lZT for
VZT
V mA
V
Dynamic Impedance 2)
ZZT
(Max.)
ZZK
(Max.)
at IZK
mA
Reverse Current
IR
µA (Max.)
at VR
V
MM1Z5221B
A4
2.4 20
2.28…2.52
30
1200
0.25
100
1
MM1Z5223B
B4
2.7 20
2.57…2.84
30
1300
0.25
75
1
MM1Z5225B
C4
3.0 20
2.85…3.15
29
1600
0.25
50
1
MM1Z5226B
D4
3.3 20
3.14…3.47
28
1600
0.25
25
1
MM1Z5227B
E4
3.6 20
3.42…3.78
24
1700
0.25
15
1
MM1Z5228B
F4
3.9 20
3.71…4.1
23
1900
0.25
10
1
MM1Z5229B
H4
4.3 20
4.09…4.52
22
2000
0.25
5
1
MM1Z5230B
J4
4.7 20
4.47…4.94
19
1900
0.25
5
2
MM1Z5231B
K4
5.1 20
4.85…5.36
17
1600
0.25
5
2
MM1Z5232B
M4
5.6 20
5.32…5.88
11
1600
0.25
5
3
MM1Z5234B
N4
6.2 20
5.89…6.51
7
1000
0.25
5
4
MM1Z5235B
P4
6.8 20
6.46…7.14
5
750 0.25
3
5
MM1Z5236B
R4
7.5 20
7.13…7.88
6
500 0.25
3
6
MM1Z5237B
X4
8.2 20
7.79…8.61
8
500 0.25
3
6.5
MM1Z5239B
Y4
9.1 20
8.65…9.56
10
600 0.25
3
7
MM1Z5240B
Z4
10 20
9.5…10.5
17 600 0.25 3
8
MM1Z5241B
A5
11 20 10.45…11.55
22
600 0.25
2
8.4
MM1Z5242B
B5
12 20
11.4…12.6
30
600 0.25
1
9.1
MM1Z5243B
C5
13 9.5 12.35…13.65
13
600 0.25
0.5
9.9
MM1Z5245B
D5
15 8.5 14.25…15.75
16
600 0.25
0.1
11
MM1Z5246B
E5
16 7.8
15.2…16.8
17
600 0.25
0.1
12
MM1Z5248B
F5
18 7
17.1…18.9
21
600 0.25
0.1
14
MM1Z5249B
K9
19 6.6 18.05…19.95
23
600 0.25
0.1
14
MM1Z5250B
H5
20 6.2
19…21
25
600 0.25
0.1
15
MM1Z5251B
J5
22 5.6
20.9…23.1
29
600 0.25
0.1
17
MM1Z5252B
K5
24 5.2
22.8…25.2
33
600 0.25
0.1
18
MM1Z5253B
M9
25 5 23.75…26.25
35
600 0.25
0.1
19
MM1Z5254B
M5
27 4.6 25.65…28.35
41
600 0.25
0.1
21
MM1Z5256B
N5
30 4.2
28.5…31.5
49
600 0.25
0.1
23
MM1Z5257B
P5
33 3.8 31.35…34.65
58
700 0.25
0.1
25
MM1Z5258B
R5
36 3.4
34.2…37.8
70
700 0.25
0.1
27
MM1Z5259B
X5
39 3.2 37.05…40.95
80
800 0.25
0.1
30
MM1Z5260B
Y5
43 3 40.85…45.15
93
900 0.25
0.1
33
MM1Z5261B
Z5
47 2.7 44.65…49.35
105
1000
0.25
0.1
36
MM1Z5263B 51VZ
51 2.5 48.45…53.55
125
1100
0.25
0.1
39
MM1Z5264B 56VZ
56 2.2
53.2…58.8
150
1300
0.25
0.1
43
MM1Z5265B 62VZ
62 2
58.9…65.1
185
1400
0.25
0.1
47
MM1Z5266B 68VZ
68 1.8
64.6…71.4
230
1600
0.25
0.1
52
MM1Z5267B 75VZ
75 1.7 71.25…78.75
270
1700
0.25
0.1
56
1) VZ is tested with pulses (20 ms)
2) ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified
limits are for IZ(AC) = 0.1 IZ(DC) with the AC frequency = 1 KHz.
®
  CUMSUMI SEMICONDUCTOR INTERNATIONAL
® www.cumsumi.com
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