ZENER DIODES. BZX1.5C15 Datasheet

BZX1.5C15 DIODES. Datasheet pdf. Equivalent

Part BZX1.5C15
Description 1 5W SILICON PLANAR ZENER DIODES
Feature R SEMICONDUCTOR BZX1.5C3V3 THRU BZX1.5C 200 1.5W SILICON PLANAR ZENER DIODES FEATURES High tempera.
Manufacture JINAN JINGHENG
Datasheet
Download BZX1.5C15 Datasheet



BZX1.5C15
R
SEMICONDUCTOR
BZX1.5C3V3 THRU BZX1.5C 200
1.5W SILICON PLANAR ZENER DIODES
FEATURES
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
DO-41(GLASS)
0.107(2.7)
0.080(2.0)
DIA.
1.00(25.4)
MIN.
0.205(5.20)
0.161(4.10)
Case: DO-41 glass case
Weight: Approx. 0.35 gram
0.034(0.86)
MAX
DIA.
1.00(25.4)
MIN.
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (TA=25 C)
Symbols
Zener current see table "Characteristics"
Power dissipation at TA=25 C
Ptot
Junction temperature
TJ
Storage temperature range
TSTG
1) Valid provided that a distance of 8mm from case is kept at ambient temperature
Value
1.51)
175
-65 to+175
Units
W
C
C
ELECTRICAL CHARACTERISTICS (TA=25 C)
Symbols
Min
Forward voltage at IF=200mA
VF
1) Valid provided that a distance of 8mm from case is kept at ambient temperature
Typ Max Units
1.2 V
JINAN JINGHENG ELECTRONICS CO., LTD.
10-24
HTTP://WWW.JINGHENGGROUP.COM



BZX1.5C15
BZX1.5C3V3 ... BZX1.5C200 SILICON PLANAR ZENER DIODES
Type
BZX1.5C3V3
BZX1.5C3V6
BZX1.5C3V9
BZX1.5C4V3
BZX1.5C4V7
BZX1.5C5V1
BZX1.5C5V6
BZX1.5C6V2
BZX1.5C6V8
BZX1.5C7V5
BZX1.5C8V2
BZX1.5C9V1
BZX1.5C10
BZX1.5C11
BZX1.5C12
BZX1.5C13
BZX1.5C15
BZX1.5C16
BZX1.5C18
BZX1.5C20
BZX1.5C22
BZX1.5C24
BZX1.5C27
BZX1.5C30
BZX1.5C33
BZX1.5C36
BZX1.5C39
BZX1.5C43
BZX1.5C47
BZX1.5C51
BZX1.5C56
BZX1.5C62
BZX1.5C68
BZX1.5C75
BZX1.5C82
BZX1.5C91
BZX1.5C100
BZX1.5C110
BZX1.5C120
BZX1.5C130
BZX1.5C150
BZX1.5C160
BZX1.5C180
BZX1.5C200
Zener Voltage Range1)
Vznom
V
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
VZT at IZT
V
3.1…3.5
3.4…3.8
3.7…4.1
4.0…4.6
4.4…5.0
4.8…5.4
5.2…6.0
5.8…6.6
6.4…7.2
7.0…7.9
7.7…8.7
8.5…9.6
9.4…10.6
10.4…11.6
11.4…12.7
12.4…14.1
13.8…15.6
15.3…17.1
16.8…19.1
18.8…21.2
20.8…23.3
22.8…25.6
25.1…28.9
28…32
31…35
34…38
37…41
40…46
44…50
48…54
52…60
58…66
64…72
70…79
77…87
85…96
94…106
104…116
114…127
124…141
138…156
153…171
168…191
188…212
IZT
mA
113.6
104.2
96.1
87.2
79.8
73.5
66.9
60.5
55.1
50
45.7
41.2
37.5
34.1
31.2
28.8
25
23.4
20.8
18.7
17
15.6
13.9
12.5
11.4
10.4
9.6
8.7
8
7.3
6.7
6
5.5
5
4.6
4.1
3.7
3.4
2.1
2.9
2.5
2.3
2.1
1.9
Dynamic Resistance
Ohm at
IZT
10
9
7.5
6
5
4
2
2
2.5
3
3.5
4
4.5
5.5
6.5
7
9
10
12
14
17.5
19
23
26
33
38
45
53
67
70
86
100
120
140
160
200
250
300
380
450
600
700
900
1,200
Ohm at
IZK
500
500
500
500
500
350
250
200
200
400
400
500
500
550
550
550
550
600
600
650
650
700
700
750
800
850
900
950
1,000
1,100
1,300
1,500
1,700
2,000
2,500
3,000
3,100
4,000
4,500
5,000
6,000
6,500
7,000
8,000
IZK
mA
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Reverse leakage current
(IR at VR)
IR VR
uA V
100 1
75 1
25 1
51
5 1.5
52
53
54
5 5.2
5 6.8
5 6.5
57
58
1 8.4
1 9.1
1 9.9
1 11.4
1 12.2
1 13.7
1 15.2
1 16.7
1 18.2
1 20.6
1 22.8
1 25.1
1 27.4
1 29.7
1 32.7
1 35.8
1 38.8
1 42.6
1 44.1
1 51.7
1 56
1 62.2
1 69.2
1 76
1 83.6
1 91.2
1 98.8
1 114
1 121.6
1 136.8
1 152
Note 1) Tested with pulse tp=20ms 2) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case
Maximum
DC Zener
Current 2)
IZM
mA
454
416
384
348
319
294
267
241
220
200
182
164
150
136
125
115
100
93
83
75
68
62
55
50
45
41
38
34
31
29
26
24
22
20
18
16
15
13
12
11
10
9
8
7
JINAN JINGHENG ELECTRONICS CO., LTD.
10-25
HTTP://WWW.JINGHENGGROUP.COM





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)