BARRIER RECTIFIER. 1N5817SF Datasheet

1N5817SF RECTIFIER. Datasheet pdf. Equivalent

Part 1N5817SF
Description SCHOTTKY BARRIER RECTIFIER
Feature R SEMICONDUCTOR 1N5817SF THRU 1N5819SF SCHOTTKY BARRIER RECTIFIER Reverse Voltage 20 to 40 Volts Fo.
Manufacture JINAN JINGHENG
Datasheet
Download 1N5817SF Datasheet



1N5817SF
R
SEMICONDUCTOR
1N5817SF THRU 1N5819SF
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage 20 to 40 Volts
Forward Current - 1.0Ampere
FEATURES
SOD-123FL
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Metal silicon junction ,majority carrier conduction
Guard ring for overvoltage protection
Low power loss ,high efficiency
JF
High current capability ,Low forward voltage drop
High surge capability
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
High temperature soldering guaranteed:260 C/10 seconds at terminals,
0.375"(9.5mm)lead length,5lbs.(2.3kg)tension
MECHANICAL DATA
0.040(1.00 )
0.020(0.50)
0.010(0.25)
MAX
0.114(2.90 )
0.098(2.50)
0.154(3.90)
0.138(3.50)
5°
0.077(1.95 )
0.054(1.38)
0.052(1.33)
0.031(0.8)
Case: SOD-123FL molded plastic body
Lead Finish: 100% Matte Sn (Tin)
Polarity: color band denotes cathode end
Mounting Position: Any
Weight: 11.7 mg(approximately)
0.010(0.25)
MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method) at TL=70 C
Maximum instantaneous forward voltage at 1.0 A(note 1 )
Maximum instantaneous forward voltage at 3.1 A(note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
T A=25 C
T A=100 C
Typical junction capacitance(Note 3)
Typical thermal resistance(Note 2)
Operating junction and storage temperature range
Symbols
VRRM
VRMS
VDC
VRSM
I(AV)
IFSM
VF
VF
IR
CJ
R JA
R JL
TJ TSTG
1N5817SF
20
14
20
24
1N5818SF
30
21
30
36
1.0
0.450
0.750
25.0
0.550
0.875
0.2
10.0
110.0
82.0
26.0
-65 to +150
1N5819SF
40
28
40
48
0.600
0.900
Units
Volts
Volts
Volts
Volts
Amp
Amps
Volts
Volts
mA
PF
C/W
C
Notes: 1.Pulse test: 300 s pulse width,1% duty cycle
2.Thermal resistance (from junction to ambient)Vertical P.C.B. mounted with 1 in. copper pad (Cu area 700 mm2).
3.Measured at 1.0MHz and reverse voltage of 4.0 volts
JINAN JINGHENG ELECTRONICS CO., LTD.
1-22
HTTP://WWW.JINGHENGGROUP.COM



1N5817SF
RATINGS AND CHARACTERISTIC CURVES 1N5817SF THRU 1N5819SF
FIG.1-FORWARD CURRENT DERATING CURVE
1
0.75
0.5
0.25
0
0
RESISTIVE OR INDUCTIVE LOAD
0.375" (9.5MM) LEAD LENGTH
20 40
60 80 100 120 140
LEAD TEMPERATURE ( C)
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
TJ=125 C
1
PULSE WIDTH=300 S
1% DUTY CYCLE
TJ=25 C
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIG.5-TYPICAL JUNCTION CAPACITANCE
400
TJ=25 C
f=1.0MHZ
Vsig=50mVp-p
100
10
0.1
1 10
REVERSE VOLTAGE. VOLTS
100
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
25 8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
20
15
10
5
0
1 10
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=125 C
1.0
0.1 TJ=75 C
0.01
TJ=25 C
0.001
0
20 40
60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE %
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1 1 10
T, PULSE DURATION ,sec.
100
JINAN JINGHENG ELECTRONICS CO., LTD.
1-23
HTTP://WWW.JINGHENGGROUP.COM





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