SOT883B
PDTC115EMB
NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
Rev. 1 — 1 June 2012
Product data shee...
SOT883B
PDTC115EMB
NPN resistor-equipped
transistor; R1 = 100 kΩ, R2 = 100 kΩ
Rev. 1 — 1 June 2012
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped
Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA115EMB.
1.2 Features and benefits
20 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs
Simplifies circuit design AEC-Q101 qualified Leadless ultra small SMD plastic
package Low package height of 0.37 mm
1.3 Applications
Low-current peripheral driver Control of IC inputs
Replaces general-purpose
transistors in digital applications
Mobile applications
1.4 Quick reference data
Table 1. Symbol VCEO
IO R1 R2/R1
Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio
Conditions open base
Tamb = 25 °C
M...