1N4678 Planar Z-Diodes Datasheet

1N4678 Datasheet, PDF, Equivalent


Part Number

1N4678

Description

Silicon Epitaxial Planar Z-Diodes

Manufacture

Vishay Telefunken

Total Page 6 Pages
Datasheet
Download 1N4678 Datasheet


1N4678
Silicon Epitaxial Planar Z–Diodes
Features
D Zener voltage specified at 50 mA
D Maximum delta VZ given from 10 mA to 100 mA
D Very high stability
D Low noise
1N4678...1N4717
Vishay Telefunken
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Power dissipation
Z–current
l=4mm, TL=25°C
Junction temperature
Storage temperature range
Type
Symbol
PV
IZ
Tj
Tstg
Value
500
PV/VZ
175
–65...+175
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, TL=constant
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=100mA
Type
Symbol
RthJA
Value
300
Unit
K/W
Symbol Min Typ Max Unit
VF 1.5 V
Document Number 85586
Rev. 2, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600
1 (6)

1N4678
1N4678...1N4717
Vishay Telefunken
Type 1)
1N4678
1N4679
1N4680
1N4681
1N4682
1N4683
1N4684
1N4685
1N4686
1N4687
1N4688
1N4689
1N4690
1N4691
1N4692
1N4693
1N4694
1N4695
1N4696
1N4697
1N4698
1N4699
1N4700
1N4701
1N4702
1N4703
1N4704
1N4705
1N4706
1N4707
1N4708
1N4709
1N4710
1N4711
1N4712
1N4713
1N4714
1N4715
1N4716
1N4717
Zener Voltage VZ @ IZ = 50mA
Typ. 1)
V
1.8
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
Min.
V
1.710
1.900
2.090
2.280
2.565
2.850
3.135
3.420
3.705
4.085
4.465
4.845
5.320
5.890
6.460
7.125
7.790
8.265
8.645
9.500
10.45
11.40
12.35
13.30
14.25
15.20
16.15
17.10
18.05
19.00
20.90
22.80
23.75
25.65
26.60
28.50
31.35
34.20
37.05
40.85
Max.
V
1.890
2.100
2.310
2.520
2.835
3.150
3.465
3.780
4.095
4.515
4.935
5.355
5.880
6.510
7.140
7.875
8.610
9.135
9.555
10.50
11.55
12.60
13.65
14.70
15.75
16.80
17.85
18.90
19.95
21.00
23.10
25.20
26.25
28.35
29.40
31.50
34.65
37.80
40.95
45.15
Max.
Reverse
Current
IR 3)
mA
7.5
5.0
4.0
2.0
1.0
0.8
7.5
7.5
5.0
4.0
10
10
10
10
10
10
1.0
1.0
1.0
1.0
0,05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
Test
Voltage
VR 3)
V
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
2.0
2.0
3.0
3.0
4.0
5.0
5.1
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19.0
20.4
21.2
22.8
25.0
27.3
29.6
32.6
Max.
Zener
Current
IZM 2)
mA
120
110
100
95
90
85
80
75
70
65
60
55
50
45
35
31.8
29.0
27.4
26.2
24.8
21.6
20.4
19.0
17.5
16.3
15.4
14.5
13.2
12.5
11.9
10.8
9.9
9.5
8.8
8.5
7.9
7.2
6.6
6.1
5.5
Max.
Voltage
Change
DVZ 4)
V
0.70
0.70
0.75
0.80
0.85
0.90
0.95
0.95
0.97
0.99
0.99
0.97
0.96
0.95
0.90
0.75
0.50
0.10
0.08
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.20
0.22
0.24
0.25
0.27
0.28
0.30
0.33
0.36
0.39
0.43
www.vishay.de FaxBack +1-408-970-5600
2 (6)
Document Number 85586
Rev. 2, 01-Apr-99


Features 1N4678...1N4717 Vishay Telefunken Silic on Epitaxial Planar Z–Diodes Features D D D D Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise Applications 94 9367 Voltage stabiliza tion Absolute Maximum Ratings Tj = 25_ C Parameter Power dissipation Z–curre nt Junction temperature Storage tempera ture range Test Conditions l=4mm, TL=25 °C Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65...+175 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25 _C Parameter Junction ambient Test Cond itions l=4mm, TL=constant Symbol RthJA Value 300 Unit K/W Electrical Characte ristics Tj = 25_C Parameter Forward vol tage Test Conditions IF=100mA Type Symb ol VF Min Typ Max 1.5 Unit V Document Number 85586 Rev. 2, 01-Apr-99 www.vis hay.de • FaxBack +1-408-970-5600 1 (6 ) 1N4678...1N4717 Vishay Telefunken Ty pe 1) Zener Voltage VZ @ IZ = 50mA Typ. 1) V 1.8 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3 .9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 2.
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