N-Channel MOSFET. ISA04N60A Datasheet

ISA04N60A MOSFET. Datasheet pdf. Equivalent

Part ISA04N60A
Description N-Channel MOSFET
Feature ISA04N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Powe.
Manufacture IPS
Datasheet
Download ISA04N60A Datasheet



ISA04N60A
ISA04N60A
N-Channel MOSFET
Pb Lead Free Package and Finish
Applications:
• Adaptor
• TV Main Power
• SMPS Power Supply
• LCD Panel Power
VDSS
600 V
RDS(ON) (Max.)
2.3 :
ID
4A
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• ESD improved Capability
Ordering Information
PART NUMBER
ISA04N60A
PACKAGE
TO-220F
BRAND
ISA04N60A
G
DS
TO-220F
Packages
Not to Scale
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
VGS Gate-to-Source Voltage
EAS
Single Pulse Avalanche Engergy
L=10 mH
IAS
dv/dt
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
ISA04N60A
600
4*
2.9
16
30
0.24
± 20
230
Figure 16
5.0
Units
V
A
W
W/oC
V
mJ
A
V/ ns
VESD(G-S)
Gate to Source ESD (HBM-C=100pF,
R=1.5K:
3000
V
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 seconds
Package Body for 10 seconds
300
260
oC
TJ and TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RTJC
RTJA
Junction-to-Case
Junction-to-Ambient
ISA04N60A
4.17
62.5
Units
oC/W
Test Conditions
Drain lead soldered to water cooled heatsink, PD ad-
justed for a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2012 InPower Semiconductor Co., Ltd.
Page 1 of 9
ISA04N60A REV. A. Jan. 2012



ISA04N60A
OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
BVDSS
Drain-to-Source Breakdown Voltage
'BVDSS/' TJ
BreakdownVoltage Temperature
Coefficient, Figure 11.
600 --
-- 0.66
Max.
--
--
-- -- 25
IDSS Drain-to-Source Leakage Current
-- -- 250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-- -- 10
-- -- -10
Units
V
V/ oC
μA
uA
Test Conditions
VGS=0V, ID=250μA
Reference to 25 oC,
ID=250 μA
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TJ=125 oC
VGS=+20 V
VGS= -20V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
VGS(TH)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
--
1.9
Gate Threshold Voltage, Figure 12.
2.0 --
gfs Forward Transconductance
-- 5.0
Max.
2.3
4.0
--
Units
:
V
S
Test Conditions
VGS=10V, ID=2.0A
(NOTE *4)
VDS=VGS, ID=250PA
VDS=15V, ID=2.0A
(NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Ciss
Coss
Crss
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
--
--
--
Typ.
530
57
11
Max.
--
--
--
Units
pF
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”) Charge
-- 15 --
-- 3.0 --
-- 7.0 --
nC
Test Conditions
VGS=0 V
VDS=25 V
f =1.0MHz
VDD=300V
ID=4AVgs=10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units
Test Conditions
-- 9.0 --
-- 6.0 --
-- 27
--
-- 8.0 --
ns
VDD=300V
ID=4A
VGS=10 V
RG=4.7 :
©2012 InPower Semiconductor Co., Ltd.
Page 2 of 9
ISA04N60A REV. A. Jan. 2012





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)