N-Channel MOSFET. ITP08N60A Datasheet

ITP08N60A MOSFET. Datasheet pdf. Equivalent

Part ITP08N60A
Description N-Channel MOSFET
Feature ITP08N60A ITA08N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • Ch.
Manufacture IPS
Datasheet
Download ITP08N60A Datasheet



ITP08N60A
ITP08N60A
ITA08N60A
N-Channel MOSFET
Pb Lead Free Package and Finish
Applications:
• Adaptor
• Charger
• SMPS Power Supply
• LCD Panel Power
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
Ordering Information
PART NUMBER
ITP08N60A
ITA08N60A
PACKAGE
TO-220
TO-220F
VDSS
600 V
RDS(ON) (Max.)
1.2 :
ID
8A
D
BRAND
ITP08N60A
ITA08N60A
G
DS
G
TO-220 DS
TO-220F
Packages
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
ITP08N60A ITA08N60A
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
600
8.0 8.0*
Figure 3
Figure 6
167 40
1.82 0.32
V
A
W
W/ oC
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH, ID=6.7Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30
580
Figure 8
5.0
V
mJ
A
V/ ns
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
300
260
-55 to 150
oC
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
ITP08N60A
RTJC
RTJA
Junction-to-Case
Junction-to-Ambient
0.75
62
ITA08N60A Units
3.1
100 oC/W
Test Conditions
Drain lead soldered to water cooled heatsink, PD ad-
justed for a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2012 InPower Semiconductor Co., Ltd.
Page 1 of 9
ITP08N60A/ITA08N60A Rev. A Mar. 2012



ITP08N60A
OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
BVDSS
Drain-to-Source Breakdown Voltage
BreakdownVoltage Temperature
'BVDSS/' TJ Coefficient, Figure 11.
600 --
-- 0.50
Max.
--
--
-- -- 1.0
IDSS Drain-to-Source Leakage Current
-- -- 250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-- -- 100
-- -- -100
Units
V
V/oC
μA
nA
Test Conditions
VGS=0V, ID=250μA
Reference to 25 oC,
ID=250 μA
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TJ=125 oC
VGS=+30 V
VGS= -30V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
VGS(TH)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
--
0.80
Gate Threshold Voltage, Figure 12.
2.0 --
gfs Forward Transconductance
-- 10
Max.
1.2
4.0
--
Units
:
V
S
Test Conditions
VGS=10V, ID=4.0A
(NOTE *4)
VDS=VGS, ID=250PA
VDS=20V, ID=8A
(NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 1253 --
-- 115 --
-- 15
--
pF
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”) Charge
-- 29
-- 7.0
-- 12
--
--
--
nC
Test Conditions
VGS=0 V
VDS=25 V
f =1.0MHz
Figure 14
VDD=300V
ID=8AVgs=10V
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units
Test Conditions
-- 13
--
-- 15
--
-- 41 --
-- 21 --
ns
VDD=300V
ID=8A
VGS=10 V
RG=9.1 :
©2012 InPower Semiconductor Co., Ltd.
Page 2 of 9
ITP08N60A/ITA08N60A Rev. A Mar. 2012





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)