MOSFET. IGW60N60F Datasheet

IGW60N60F MOSFET. Datasheet pdf. Equivalent

Part IGW60N60F
Description MOSFET
Feature IGW60N60F General Description: Using advanced IGBT technology, the 600V IGBT. Offers superior condu.
Manufacture IPS
Datasheet
Download IGW60N60F Datasheet



IGW60N60F
IGW60N60F
General Description
Using advanced IGBT technology, the 600V IGBT.
Offers superior conduction and switching performances.
Lead Free Package and Finish
VCES
600V
VCE(sat)
2.2V
IC
60A
Features:
Low saturation voltage: VCE(sat),typ=2.2V @IC=60A,VGE=15V;
RoHS Compliant;
Applications:
Inverter welder
Solar inverters
UPS
High switching frequency inverter
Ordering Information
Part Number
Package
IGW60N60F
TO-3P
Brand
IPS
Absolute Maximum RatingsTa= 25℃,unless otherwise specified
Symbol
Parameter
Rating
Units
VCES Collector-Emitter Voltage
600
VGES Gate- Emitter Voltage
±20
IC
ICMa1
IF
Collector Current
Collector Current
@TC=100
Pulsed Collector Current @TC=25
Diode Continuous Forward Current@TC=100
120
60
180
30
IFM Diode Maximum Forward Current
Power Dissipation
@TC=25
100
300
PD Power Dissipation
Power Dissipation
@TC=100
@TA=25
120
3.125
TJ Operating Junction
Tstg Storage Temperature Range
150
-55150
TL Maximum Temperature for Soldering
300
a1Repetitive rating; pulse width limited by maximum junction temperature
V
V
A
A
A
A
W
©2016 InPower Semiconductor Co., Ltd.
Page 1 of 6
IGW60N60F REV. A. Mar. 2016



IGW60N60F
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction to case for IGBT
RθJC Thermal Resistance, Junction to case for Diode
RθJA Thermal Resistance, Junction to Ambient
IGW60N60F
Typ. Max.
-- 0.416
-- 0.80
-- 40
Units
/W
/W
/W
Electrical Characteristics of the IGBT (Ta= 25, unless otherwise specified)
Symbol
Parameter
Test Conditions
Rating
Min Typ. Max.
OFF Characteristics
V(BR)CES Collector-Emitter Breakdown Voltage
ICES Collector-Emitter Leakage Current
IGES(F) Gate to Emitter Forward Leakage
IGES(R) Gate to Source Reverse Leakage
ON Characteristics
VGE=0V,ICE=250uA
VGE=0V,VCE=600V
VGE=+20V
VGE =-20V
600
--
--
--
-- --
-- 1.0
-- +250
-- -250
VCE(sat) Collector-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
Pulse width tp≤380µs,δ≤2%
IC=60A ,VGE=15V
IC=1mA ,VCE=VGE
-- 2.2 2.9
3.5 5.0 6.5
Dynamic Characteristics
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Switching Characteristics
VCE=30V,VGE=0V
f=1MHz
-- 2890 --
-- 310 --
-- 70 --
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
Qg Total Gate Charge
Qge Gate to Emitter Charge
Qgc Gate to Collector Charge
Electrical Characteristics of the Diode
VCE=400V,IC=60A,
Rg=10Ω,VGE=15V,
Inductive Load,
Ta=25℃,
VCE=400V,IC=60A,
VGE=15V,
-- 52 --
-- 110 --
-- 175 --
-- 45 --
-- 3.83 --
-- 1.13 --
-- 4.96 --
-- 150 --
-- 30 --
-- 74 --
VF Diode Forward Voltage
IF=30A
Trr Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
IF=20A
di/dt=200A/uS
Qrr Reverse Recovery Charge
-- 1.8 2.6
-- 90 --
-- 7.2 --
-- 326 --
Units
V
mA
nA
nA
V
V
pF
ns
mJ
nC
V
ns
A
nC
©2016 InPower Semiconductor Co., Ltd.
Page 2 of 6
IGW60N60F REV. A. Mar. 2016





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