Super-Junction MOSFET. SJTA11N65C Datasheet

SJTA11N65C MOSFET. Datasheet pdf. Equivalent

Part SJTA11N65C
Description Super-Junction MOSFET
Feature SJTA11N65C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Pac.
Manufacture IPS
Datasheet
Download SJTA11N65C Datasheet



SJTA11N65C
SJTA11N65C
Super-Junction MOSFET
Applications:
Adaptor
Charger
SMPS
VDSS
650V
Lead Free Package and Finish
RDS(ON)(Typ.)
0.34Ω
ID
11A
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
SJTA11N65C
TO-220F
BRAND
IPS
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
SJTA11N65C
VDSS
ID
IDM
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current, VGS@10V
(NOTE *2)
650
11
33
Power Dissipation
PD Derating Factor above 25
31.3
0.25
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy(L=10mH)
±30
240
EAR Avalanche Energy ,Repetitive (NOTE *2)
0.32
IAR Avalanche Current (NOTE *2)
TL Maximum Temperature for Soldering
3.5
300
Operating Junction and Storage
TJ and TSTG Temperature Range (NOTE *1)
150-55 to150
Units
V
A
A
W
W/
V
mJ
mJ
A
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
4
80
Units
∕W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2015 InPower Semiconductor Co., Ltd.
Page 1 of 8
SJTA11N65C REV. A. Nov. 2015



SJTA11N65C
SJTA11N65C
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 650 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=650V, VGS=0V
TJ=25
VDS=650V, VGS=0V
TJ=150
VGS=+30V
VGS= -30V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source
On-Resistance(NOTE *3)
-- 0.34
VGS(TH)
Gate Threshold Voltage
2.5 --
gfs Forward Transconductance(NOTE *3) -- 7.8
Max.
0.38
4
--
Units
Ω
Test Conditions
VGS=10V, ID=5A
V VDS=VGS,ID=250μA
S VDS=10V, ID=5A
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
-- 700 --
-- 110 -- pF VGS= 0V,VDS = 50V
f =1.0MHz
-- 7
--
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
-- 20
--
-- 4
-- nC ID=5.5A,VDD=520V
-- 6
--
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 12
-- 12
-- 110
ns VDD=400V, ID=5.5A,
VG=10V RG=25Ω
-- 11
©2015 InPower Semiconductor Co., Ltd.
Page 2 of 8
SJTA11N65C REV. A. Nov. 2015





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