Super-Junction MOSFET. SJTD08N65C Datasheet

SJTD08N65C MOSFET. Datasheet pdf. Equivalent

Part SJTD08N65C
Description Super-Junction MOSFET
Feature SJTD08N65C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Pac.
Manufacture IPS
Datasheet
Download SJTD08N65C Datasheet



SJTD08N65C
SJTD08N65C
Super-Junction MOSFET
Applications:
Adaptor
Charger
SMPS
VDSS
650V
Lead Free Package and Finish
RDS(ON)(Typ.)
0.56Ω
ID
8A
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
SJTD08N65C TO-252
BRAND
IPS
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
SJTD08N65C
VDSS
Drain-to-Source Voltage
650
ID Continuous Drain Current
8
IDM Pulsed Drain Current, VGS@10V (NOTE *2)
24
Power Dissipation
PD Derating Factor above 25
63
0.5
VGS Gate-to-Source Voltage
±30
EAS Single Pulse Avalanche Energy
162
EAR Avalanche Energy ,Repetitive (NOTE *2)
0.2
IAR Avalanche Current (NOTE *2)
1.4
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range (NOTE *1)
150-55 to150
Units
V
A
A
W
W/
V
mJ
mJ
A
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient
Typ.
2
62
Units
W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2016 InPower Semiconductor Co., Ltd.
Page 1 of 8
SJTD08N65C REV. B. Oct. 2016



SJTD08N65C
SJTD08N65C
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 650 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=650V, VGS=0V
TJ=25
VDS=650V, VGS=0V
TJ=150
VGS=+30V
VGS= -30V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source
On-Resistance(NOTE *3)
-- 0.56
VGS(TH)
Gate Threshold Voltage
2.5 --
gfs Forward Transconductance(NOTE *3) -- 5
Max.
0.62
4
--
Units
Ω
Test Conditions
VGS=10V, ID=3A
V VDS=VGS,ID=250μA
S VDS=10V, ID=3A
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
-- 587
-- 31
-- 4
--
--
--
pF VGS= 0V,VDS = 50V
f =1.0MHz
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
-- 14.5
-- 3
-- 5.2
--
--
--
nC ID=7A,VDD=520V
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
trise Rise Time
td(OFF)
Turn-Off Delay Time
tfall Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 39
-- 25
-- 100
ns
VDD=400V, ID=7A,
VG=10V RG=25
-- 18
©2016 InPower Semiconductor Co., Ltd.
Page 2 of 8
SJTD08N65C REV. B. Oct. 2016





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