Super-Junction MOSFET. SJTA11N70C Datasheet

SJTA11N70C MOSFET. Datasheet pdf. Equivalent

Part SJTA11N70C
Description Super-Junction MOSFET
Feature SJTA11N70C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 700V Lead Free Pac.
Manufacture IPS
Datasheet
Download SJTA11N70C Datasheet



SJTA11N70C
SJTA11N70C
Super-Junction MOSFET
Applications:
Adaptor
Charger
SMPS
VDSS
700V
Lead Free Package and Finish
RDS(ON)(Typ.)
0.49Ω
ID
11A
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
SJTA11N70C
TO-220F
BRAND
IPS
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
SJTA11N70C
VDSS
Drain-to-Source Voltage
700
ID Continuous Drain Current
11
IDM Pulsed Drain Current, VGS@10V (NOTE *1)
33
Power Dissipation
PD Derating Factor above 25
31.3
0.25
VGS Gate-to-Source Voltage
±30
EAS Single Pulse Avalanche Energy(NOTE *2)
211
EAR Avalanche Energy ,Repetitive (NOTE *1)
0.32
IAR Avalanche Current (NOTE *1)
1.6
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
W
W/
V
mJ
mJ
A
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient
Max.
4
80
Units
W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2017 InPower Semiconductor Co., Ltd.
Page 1 of 8
SJTA11N70C Preliminary. Apr. 2017



SJTA11N70C
SJTA11N70C
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 700 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=700V, VGS=0V
TJ=25
VDS=700V, VGS=0V
TJ=150
VGS=+30V
VGS= -30V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source
On-Resistance(NOTE *3)
-- 0.49
VGS(TH)
Gate Threshold Voltage
2.5 --
gfs Forward Transconductance(NOTE *3) -- 7.8
Max.
0.55
4
--
Units
Ω
Test Conditions
VGS=10V, ID=5.5A
V VDS=VGS,ID=250μA
S VDS=10V, ID=5.5A
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
-- 901
-- 50
-- 5.5
--
--
--
pF VGS= 0V,VDS = 50V
f =1.0MHz
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
-- 21
--
-- 4.7 -- nC ID=11A,VDD=560V
-- 7.3
--
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
trise Rise Time
td(OFF)
Turn-Off Delay Time
tfall Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 41
--
-- 20
-- 123
--
--
ns
VDD=400V, ID=11A,
VG=10V RG=25
-- 6.4
--
©2017 InPower Semiconductor Co., Ltd.
Page 2 of 8
SJTA11N70C Preliminary. Apr. 2017





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