DatasheetsPDF.com

IGW30N60F

IPS

MOSFET


Description
IGW30N60F General Description: Using advanced IGBT technology, the 600V IGBT. Offers superior conduction and switching performances. Lead Free Package and Finish VCES 600V VCE(sat) 2.0V IC 30A Features: ●Low saturation voltage: VCE(sat),typ=2.0V @IC=30A,VGE=15V; ●RoHS Compliant; Applications: ● Inverter welder ● Solar inverters ● UPS ● High switching ...



IPS

IGW30N60F

File Download Download IGW30N60F Datasheet


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)