MRF136

MRF136 RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI MRF136 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Amplifier Applications up to 400 MHz. MAXIMUM RATINGS ID 2.5 A VDSS 65 V PDISS 50 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 3.6 °C/W PACKAGE STYLE .380 4L FLG 1 = DRAIN 2 = GATE 3 & 4 = SOURCE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS V(BR)DSS ID = 5.0 mA VGS = 0 V IDSS VDS = 28 V VGS = 0 V IGSS VDS = 0 V VGS = 40 V VGS(th) ID = 25 mA VDS = 10 V gfs ID = 250 mA VDS = 10 V Ciss Coss Crss VDS = 28 V VGS = 0 V f = 1.0 MHz NF VDS = 28 V ID = 0.5 A f = 150 MHz Gps VDD = 28 V Pout = 15 W η IDQ = 25 mA f = 150 MHz ψ VDD = 28 V Pout = 15 W f = 150 MHz IDQ = 25 mA VSWR 30:1 @ ALL PHASE ANGLES MINIMUM TYPICAL MAXIMUM 65 2.0 1.0 1.0 3.0 6.0 250 400 UNITS V mA µA V mmhos 24 25 pF 5.5 1.0 dB 12 16 50 60 dB % NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D ...