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BFX34 Data Sheet

NPN SILICON SWITCHING TRANSISTOR

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BFX34

BFX34 NPN SILICON SWITCHING TRANSISTOR DESCRIPTION: The ASI BFX34 is Designed for General Purpose Medium Power Switching and Amplifier applications. MAXIMUM RATINGS IC 5.0 A VCBO 120 V VCEO 60 V PDISS 5.0 W @ TA = 25 °C TJ -65 to +200 °C TSTG -65 to +200 °C θJC 35 °C/W ELECTRICAL CHARA.

BFX34

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BFX34 NPN SILICON SWITCHING TRANSISTOR DESCRIPTION: The ASI BFX34 is Designed for General Purpose Medium Power Switching and Amplifier applications. MAXIMUM RATINGS IC 5.0 A VCBO 120 V VCEO 60 V PDISS 5.0 W @ TA = 25 °C TJ -65 to +200 °C TSTG -65 to +200 °C θJC 35 °C/W ELECTRICAL CHARACTERISTICS TA = 25 °C SYMBOL TEST CONDITIONS BVCEO IC = 100 mA BVCBO IC = 5.0 mA BVEBO IE = 1.0 mA ICES VCE = 60 V IEBO VEB = 4.0 V hFE VCE(SAT) VBE(SAT) VCE = 2.0 V VCE = 0.6 V VCE = 2.0 V IC = 5.0 A IC = 5.0 A IC = 1.0 A IC = 2.0 A IC = 2.0 A IB = 500 mA IB = 500 mA PACKAGE STYLE TO-39 1 = Emitter 2 = Base 3 = Collector MINIMUM 60 120 6.0 40 NONE TYPICAL MAXIMUM 0.02 10 100 75 80 150 1.0 1.6 UNITS V V V µA µA --- V V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982.




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