Freescale Semiconductor Technical Data
Document Number: A2I35H060N Rev. 0, 4/2016
RF LDMOS Wideband Integrated Power Amplifiers
The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 3400 to 3800 MHz. This multi--stage structure is rated for 26 to 32 V operation and covers all typica...
