A2I20H080NR1

Freescale Semiconductor Technical Data Document Number: A2I20H080N Rev. 0, 3/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20H080N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 1800 to 2200 MHz. This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats. 1800 MHz  Typical Doherty Single--Carrier W--CDMA Characterization Performance: VPVDGroDSb2=aBb3=il0it1yV.2od5nc,VCIdDCcQD,1PFA.o(=1u)t3=01m3A.5, WIDQA2vAg=., 1In9p5umt SAi,gnVaGlSP1ABR= 1.35 Vdc, = 9.9 dB @ 0.01% Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 28.4 28.2 27.9 PAE (%) 42.1 43.4 42.9 ACPR (dBc) –36.9 –38.6 –34.0 1. All data measured in fixture with device soldered to heatsink. Features  Advanced High Performance In--Package Doherty  On--Chip Matching (50 Ohm Input, DC Blocked)  Integrated Quiescent Current Temperature Compensation with Enable/Dis...