DatasheetsPDF.com

TSS. P0080BESA Datasheet

DatasheetsPDF.com

TSS. P0080BESA Datasheet






P0080BESA TSS. Datasheet pdf. Equivalent




P0080BESA TSS. Datasheet pdf. Equivalent





Part

P0080BESA

Description

TSS



Feature


JIEJIE MICROELECTRONICS CO. , Ltd P0080 BESA TSS Rev.1 FEATURES:   Low pr ofile package.  Low on-state voltage .  Excellent capability of absorbing transient surge.  Quick response to surge voltage (ns Level).  Eliminat es overvoltage caused by fast rising tr ansients.  Moisture sensitivity leve l: Level 1.  Non degenerative.   1 SMA  Symbol   2 ABSOLUTE MAXIM.
Manufacture

JIEJIE

Datasheet
Download P0080BESA Datasheet


JIEJIE P0080BESA

P0080BESA; UM RATINGS (TA=25℃, RH=45%-75%, unle ss otherwise noted)  Parameter Storag e temperature range Operating junction temperature range Repetitive peak pulse current ESD rating per IEC61000-4-2: C ontact & Air   ELECTRICAL CHARACTERIS TICS (TA=25℃) Symbol Value TSTG -60 to +150 TJ -40 to +125 IPP See su rge ratings Unit ℃ ℃ A ±15 KV S ymbol VDRM IDRM VS IS VT IT IH CO.


JIEJIE P0080BESA

Parameter Peak off-state voltage Off-s tate current Switching voltage Switchin g current On-state voltage On-state cur rent Holding current Off-state capacita nce V‐I Curve  -V +I IIITSH IDRM VT +V VDRM VS -I TEL:+86- .


JIEJIE P0080BESA

.

Part

P0080BESA

Description

TSS



Feature


JIEJIE MICROELECTRONICS CO. , Ltd P0080 BESA TSS Rev.1 FEATURES:   Low pr ofile package.  Low on-state voltage .  Excellent capability of absorbing transient surge.  Quick response to surge voltage (ns Level).  Eliminat es overvoltage caused by fast rising tr ansients.  Moisture sensitivity leve l: Level 1.  Non degenerative.   1 SMA  Symbol   2 ABSOLUTE MAXIM.
Manufacture

JIEJIE

Datasheet
Download P0080BESA Datasheet




 P0080BESA
JIEJIE MICROELECTRONICS CO. , Ltd
P0080BESA TSS
Rev.1
FEATURES: 
Low profile package.
Low on-state voltage.
Excellent capability of absorbing transient surge.
Quick response to surge voltage (ns Level).
Eliminates overvoltage caused by fast rising transients.
Moisture sensitivity level: Level 1.
Non degenerative.
 
1
SMA 
Symbol
 
2
ABSOLUTE MAXIMUM RATINGS (TA=25, RH=45%-75%, unless otherwise noted) 
Parameter
Storage temperature range
Operating junction temperature range
Repetitive peak pulse current
ESD rating per IEC61000-4-2:
Contact & Air
 
ELECTRICAL CHARACTERISTICS (TA=25)
Symbol
Value
TSTG
-60 to +150
TJ -40 to +125
IPP See surge ratings
Unit
A
±15 KV
Symbol
VDRM
IDRM
VS
IS
VT
IT
IH
CO
Parameter
Peak off-state voltage
Off-state current
Switching voltage
Switching current
On-state voltage
On-state current
Holding current
Off-state capacitance
VI Curve 
-V
+I
IIITSH
IDRM
VT
+V
VDRM VS
-I
TEL:+86-513-83639777
-1 / 5-
http://www.jjwdz.com




 P0080BESA
P0080BESA
MARKING 
JieJie Microelectronics CO. , Ltd
1409
P08BE
P08BE : Device Marking Code
1409: In ninth week, 2014
 
ELECTRICAL CHARACTERISTICS (TA=25, continued)
Part
Number
IDRM@VDRM
μA V
max
VS@IS
V mA
max max
VT@ IT
VA
max max
IH
mA
min
CO
pF
max
P0080BESA 1
7 12.5 800 4 2.2 30
Vs is measured at 100KV/s
Off-state capacitance is measured in VDC=2V,VRMS=1V, f=1MHz
110
Marking
P08BE
SURGE RATINGS
Series
2×10μs
B 250
 
ORDERING INFORMATION 
IPP(A) min
8×20μs
10×360μs
250 125
10×1000μs
80
 
 
 
 
 
 
 
 
TEL:+86-513-83639777
-2 / 5-
http://www.jjwdz.com




 P0080BESA
P0080BESA
JieJie Microelectronics CO. , Ltd
SOLDERING PARAMETERS 
Reflow Condition
Pre Heat
-Temperature Min (Ts(min))
-Temperature Max(Ts(max))
-Time (Min to Max) (ts)
Average ramp up rate (Liquidus Temp (TL)to peak)
Ts(max) to TL - Ramp-up Rate
Reflow
-Temperature(TL) (Liquidus)
-Temperature(tL)
Peak Temp (Tp)
Time within 5of actual Peak Temp (tp)
Ramp-down Rate
Time 25to Peak Temp (TP)
Do not exceed
Pb-Free assembly
(see FIG.2)
+150
+200
60-180 secs.
3/sec. Max
3/sec. Max
+217
60-150 secs.
+260(+0/-5)
30secs. Max
6/sec. Max
8 min. Max
+260
FIG.1: tr × td pulse waveform
%IPP
100 Peak value
tr = rise time to peak value
td = decay time to half value
50 Half value
00 tr
t(μs)
td
FIG.3: Normalized Vs change vs. junction
temperature
Percent of Vs change(%)
12
8
4
25
0
-4
-8 Tj()
-40 -20 0 20 40 60 80 100 120 140
FIG.2: Reflow condition
TP
TL
TS(max)
Ramp-up
tp
tL
TS(min)
Preheat
ts
Critical Zone
TL to TP
Ramp-down
25 time to peak temperatue
(t 25to peak)
Time
FIG.4: Normalized DC holding current vs. case
temperature
IH(Tj)/IH(Tj=25)
2.0
1.8
1.6
1.4
1.2 25
1.0
0.8
0.6
0.4 TC()
-40 -20 0 20 40 60 80 100 120 140
TEL:+86-513-83639777
-3 / 5-
http://www.jjwdz.com



Recommended third-party P0080BESA Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)