IXTH24P20

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 24P20 IXTT 24P20 VDSS = - 200 V ID25 = - 24 A ≤RDS(on) 0.15 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic Body for 10s Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings -200 -200 V V ±20 V ±30 V -24 A -96 A -24 A 30 mJ 300 W -55 ... +150 150 -55 ... +150 °C °C °C 400 °C 250 °C 1.13/10 Nm/lb.in. 6g 5g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TO-247 (IXTH) D (TAB) TO-268 (IXTT) GS D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features International standard packages Low RDS (on) HDMOSTM process ...