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IS61NVVP51232B Dataheets PDF



Part Number IS61NVVP51232B
Manufacturers ISSI
Logo ISSI
Description 18Mb STATE BUS SYNCHRONOUS SRAM
Datasheet IS61NVVP51232B DatasheetIS61NVVP51232B Datasheet (PDF)

IS61NLP51236(32)B/IS61NVP51236(32)B/IS61NVVP51236(32)B IS61NLP102418B/IS61NVP102418B/IS61NVVP102418B 512K x36 and 1024K x18 18Mb, PIPELINE 'NO WAIT' STATE BUS SYNCHRONOUS SRAM AUGUST 2019 FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control using MODE input • Thre.

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IS61NLP51236(32)B/IS61NVP51236(32)B/IS61NVVP51236(32)B IS61NLP102418B/IS61NVP102418B/IS61NVVP102418B 512K x36 and 1024K x18 18Mb, PIPELINE 'NO WAIT' STATE BUS SYNCHRONOUS SRAM AUGUST 2019 FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control using MODE input • Three chip enables for simple depth expansion and address pipelining • Power Down mode • Common data inputs and data outputs • /CKE pin to enable clock and suspend operation • JEDEC 100-pin QFP, 165-ball BGA and 119- ball BGA packages • Power supply: NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%) NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%) NVVP: VDD 1.8V (± 5%), VDDQ 1.8V (± 5%) • JTAG Boundary Scan for BGA packages • Commercial, Industrial and Automotive (x36) temperature support • Lead-free available • For leaded option, please contact ISSI. DESCRIPTION The 18Meg product family features high-speed, lowpower synchronous static RAMs designed to provide a burstable, high-performance, 'no wait' state, device for networking and communications applications. They are organized as 512K words by 36 bits and 1024K words by 18 bits, fabricated with ISSI's advanced CMOS technology. Incorporating a 'no wait' state feature, wait cycles are eliminated when the bus switches from read to write, or write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and highdrive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers are controlled by a positive-edge-triggered single clock input. Operations may be suspended and all synchronous inputs ignored when Clock Enable, /CKE is HIGH. In this state the internal device will hold their previous values. All Read, Write and Deselect cycles are initiated by the ADV input. When the ADV is HIGH the internal burst counter is incremented. New external addresses can be loaded when ADV is LOW. Write cycles are internally self-timed and are initiated by the rising edge of the clock inputs and when /WE is LOW. Separate byte enables allow individual bytes to be written. A burst mode pin (MODE) defines the order of the burst sequence. When tied HIGH, the interleaved burst sequence is selected. When tied LOW, the linear burst sequence is selected. FAST ACCESS TIME Symbol tKQ tKC Parameter Clock Access Time Cycle time Frequency -250 2.6 4 250 -200 3.0 5 200 Units ns ns MHz Copyright © 2019 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published i.


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