128K x 8 HIGH-SPEED CMOS STATIC RAM
• High-speed access time: 12, 15 ns
• Low active power: 160 mW (typical)
• Low standby power: 1000 µW (typical) CMOS
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
• Commercial, industrial, and automotive tempera-
ture ranges available
• Lead free available
FUNCTIONAL BLOCK DIAGRAM
The ISSI IS61C1024AL/IS64C1024AL is a very high-
speed, low power, 131,072-word by 8-bit CMOS static
RAMs.They are fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields higher
performance and low power consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation
can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs, CE1 and CE2.The active LOWWrite Enable
(WE) controls both writing and reading of the memory.
The IS61C1024AL/IS64C1024AL is available in 32-pin
300-mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP (Type I,
8x20), and 32-pin sTSOP (Type I, 8 x 13.4) packages.
128K x 8
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notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest
version of this device specification before relying on any published information and before placing orders for products.
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