256Mb DDR Synchronous DRAM
IS43R83200B, IS46R83200B
IS43R16160B, IS46R16160B
32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
AUGUST 2010
FEATURES: • Vd...
Description
IS43R83200B, IS46R83200B
IS43R16160B, IS46R16160B
32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
AUGUST 2010
FEATURES: Vdd =Vddq = 2.5V+0.2V (-5, -6, -75)
Double data rate architecture; two data transfers per clock cycle.
Bidirectional , data strobe (DQS) is transmitted/ received with data
Differential clock input (CLK and /CLK)
DLL aligns DQ and DQS transitions with CLK transitions edges of DQS
Commands entered on each positive CLK edge;
Data and data mask referenced to both edges of DQS
4 bank operation controlled by BA0 , BA1 (Bank Address)
/CAS latency -2.0 / 2.5 / 3.0 (programmable) ; Burst length -2 / 4 / 8 (programmable) Burst type -Sequential / Interleave (programmable)
Auto precharge/ All bank precharge controlled by A10
8192 refresh cycles / 64ms (4 banks concurrent refresh)
Auto refresh and Self refresh
Row address A0-12 / Column address A0-9(x8)/ A0-8(x16)
SSTL_2 Interface
Package: 66-pin TSOP II (x8 and...
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