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NTMFS4C022N Dataheets PDF



Part Number NTMFS4C022N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet NTMFS4C022N DatasheetNTMFS4C022N Datasheet (PDF)

MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 1.7 mW, 136 A NTMFS4C022N Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (No.

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MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 1.7 mW, 136 A NTMFS4C022N Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Notes 1, 3) Steady State TC = 25°C TC = 25°C VDSS VGS ID PD 30 V "20 V 136 A 64 W Continuous Drain Cur- TA = 25°C ID rent RqJA (Notes 1, 2, 3) Steady Power Dissipation RqJA State TA = 25°C PD (Notes 1, 2, 3) 30 A 3.1 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C 150 Source Current (Body Diode) IS 53 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 11 A) EAS 549 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Case − Steady State (Note 2) RqJC 1.95 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 40 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. DATA SHEET www.onsemi.com V(BR)DSS 30 V RDS(ON) MAX 1.7 mW @ 10 V 2.6 mW @ 4.5 V ID MAX 136 A D (5,6) G (4) S (1,2,3) N−CHANNEL MOSFET 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 MARKING DIAGRAM D S D S 4C022 S AYWZZ G D D A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION Device NTMFS4C022NT1G Package SO−8FL (Pb−Free) Shipping† 1500 / Tape & Reel NTMFS4C022NT3G SO−8FL 5000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 1 February, 2022− Rev. 7 Publication Order Number: NTMFS4C022N/D NTMFS4C022N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS V(BR)DSS/ TJ VGS = 0 V, ID = 250 mA 30 18.2 V mV/°C Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4) IDSS IGSS VGS = 0 V, VDS = 24 V TJ = 25 °C TJ = 125°C VDS = 0 V, VGS = 20 V 1 mA 10 100 nA Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) Forward Transconductance gFS Gate Resistance RG CHARGES AND CAPACITANCES VGS = VDS, ID = 250 mA VGS = 10 V ID = 30 A VGS = 4.5 V ID = 30 A VDS = 3 V, ID = 30 A TA = 25 °C 1.3 4.8 1.4 2.0 136 1.0 2.2 V mV/°C 1.7 mW 2.6 S W Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge CISS 3071 COSS VGS = 0 V, f = 1 MHz, VDS = 15 V 1673 pF CRSS 67 QG(TOT) 20.8 QG(TH) 4.9 QGS VGS = 4.5 V, VDS = 15 V; ID = 30 A 8.5 nC QGD 4.7 QG(TOT) VGS = 10 V, VDS = 15 V, ID = 30 A 45.2 nC SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time td(ON) 14 Rise Time Turn−Off Delay Time tr VGS = 4.5 V, VDS = 15 V, ID = 15 A, 32 td(OFF) RG = 3.0 W 27 ns Fall Time tf 17 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C IS = 10 A TJ = 125°C 0.75 1.1 V 0.6 Reverse Recovery Time tRR 47 Charge Time Discharge Time ta VGS = 0 V, dIS/dt = 100 A/ms, 23 ns tb IS = 30 A 24 Reverse Recovery Charge QRR 39 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 ID, DRAIN CURRENT (A) NTMFS4C022N TYPICAL CHARACTERISTICS 250 250 225 4.5 V 3.8 V TJ = 25°C 225 VDS = 3 V ID, DRAIN CURRENT (A) 200 3.6 V 200 175 3.4 V 175 150 VGS = 10 V 150 125 .


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