Document
MOSFET – Power, Single, N-Channel, SO-8FL
30 V, 1.7 mW, 136 A
NTMFS4C022N
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Notes 1, 3)
Steady State
TC = 25°C TC = 25°C
VDSS VGS ID
PD
30
V
"20 V
136
A
64
W
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1, 2, 3) Steady
Power Dissipation RqJA State TA = 25°C
PD
(Notes 1, 2, 3)
30
A
3.1
W
Pulsed Drain Current
TA = 25°C, tp = 10 ms IDM
900
A
Operating Junction and Storage Temperature Range
TJ, Tstg − 55 to °C 150
Source Current (Body Diode)
IS
53
A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 11 A)
EAS
549 mJ
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Note 2)
RqJC
1.95 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
40
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
DATA SHEET www.onsemi.com
V(BR)DSS 30 V
RDS(ON) MAX 1.7 mW @ 10 V 2.6 mW @ 4.5 V
ID MAX 136 A
D (5,6)
G (4)
S (1,2,3) N−CHANNEL MOSFET
1
SO−8 FLAT LEAD CASE 488AA STYLE 1
MARKING DIAGRAM
D
S
D
S 4C022
S AYWZZ
G
D
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
Device NTMFS4C022NT1G
Package
SO−8FL (Pb−Free)
Shipping†
1500 / Tape & Reel
NTMFS4C022NT3G SO−8FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
February, 2022− Rev. 7
Publication Order Number: NTMFS4C022N/D
NTMFS4C022N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temperature Coefficient
V(BR)DSS V(BR)DSS/
TJ
VGS = 0 V, ID = 250 mA
30 18.2
V mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4)
IDSS IGSS
VGS = 0 V, VDS = 24 V
TJ = 25 °C TJ = 125°C
VDS = 0 V, VGS = 20 V
1 mA
10
100
nA
Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance
VGS(TH) VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
Gate Resistance
RG
CHARGES AND CAPACITANCES
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 30 A
VGS = 4.5 V
ID = 30 A
VDS = 3 V, ID = 30 A
TA = 25 °C
1.3 4.8 1.4 2.0 136 1.0
2.2
V
mV/°C
1.7 mW
2.6
S
W
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge
CISS
3071
COSS
VGS = 0 V, f = 1 MHz, VDS = 15 V
1673
pF
CRSS
67
QG(TOT)
20.8
QG(TH)
4.9
QGS
VGS = 4.5 V, VDS = 15 V; ID = 30 A
8.5
nC
QGD
4.7
QG(TOT)
VGS = 10 V, VDS = 15 V, ID = 30 A
45.2
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
td(ON)
14
Rise Time Turn−Off Delay Time
tr
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
32
td(OFF)
RG = 3.0 W
27
ns
Fall Time
tf
17
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 A
TJ = 125°C
0.75 1.1 V
0.6
Reverse Recovery Time
tRR
47
Charge Time Discharge Time
ta
VGS = 0 V, dIS/dt = 100 A/ms,
23
ns
tb
IS = 30 A
24
Reverse Recovery Charge
QRR
39
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures.
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ID, DRAIN CURRENT (A)
NTMFS4C022N
TYPICAL CHARACTERISTICS
250
250
225
4.5 V
3.8 V
TJ = 25°C
225 VDS = 3 V
ID, DRAIN CURRENT (A)
200
3.6 V
200
175
3.4 V
175
150
VGS = 10 V
150
125
.