ZENER DIODES. MM1Z5252B Datasheet

MM1Z5252B DIODES. Datasheet pdf. Equivalent

Part MM1Z5252B
Description ZENER DIODES
Feature MM1Z5221B - MM1Z5267B VZ : 2.4 to 75 V PD : 500 mW FEATURES : * Total Power Dissipation 500 mW * Sma.
Manufacture EIC
Datasheet
Download MM1Z5252B Datasheet



MM1Z5252B
MM1Z5221B - MM1Z5267B
VZ : 2.4 to 75 V
PD : 500 mW
FEATURES :
* Total Power Dissipation 500 mW
* Small plastic package suitable for
surface mounted design
* Tolerance approximately ± 5%
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-123
* Weight : 0.01 gram (approximately)
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
ZENER DIODES
SOD-123
2.7
2.6
3.9
3.7
Dimensions in millimeters
Maximum Ratings and Thermal Characteristics
Rating at 25 °C ambient temperature unless otherwise specified.
Parameter
Power Dissipation at TL = 75 °C
Derated above 75 °C
Forward Voltage at IF = 10 mA
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Lead
Junction Temperature Range
Storage Temperature Range
Symbol
PD
VF
RӨJA
RӨJL
TJ
TSTG
Value
500
6.7
0.9
340
150
-55 to + 150
-55 to + 150
Unit
mW
mW/°C
V
°C/W
°C/W
°C
°C
Page 1 of 2
Rev. 01 : May 29, 2008



MM1Z5252B
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
ELECTRICAL CHARACTERISTICS (Ta=25 °C unless otherwise noted)
Type No.
Marking
Zener Voltage (1,2)
VZ @ IZT (V)
Min. Nom. Max.
Test
Current
IZT
(mA)
Maximum Zener
Impedance (3)
ZZT @ IZT ZZK @ IZK
(Ω) (Ω)
MM1Z5221B
A4 2.28 2.4 2.52
20
30 1200
MM1Z5223B
B4 2.57 2.7 2.84
20
30 1300
MM1Z5225B
C4 2.85 3.0 3.15
20
29 1600
MM1Z5226B
D4 3.14 3.3 3.47
20
28 1600
MM1Z5227B
E4 3.42 3.6 3.78
20
24 1700
MM1Z5228B
F4 3.71 3.9 4.10 20
23 1900
MM1Z5229B
H4 4.09 4.3 4.52
20
22 2000
MM1Z5230B
J4 4.47 4.7 4.94 20
19 1900
MM1Z5231B
K4 4.85 5.1 5.36
20
17 1600
MM1Z5232B
M4 5.32 5.6 5.88
20
11 1600
MM1Z5234B
N4 5.89 6.2 6.51
20
7 1000
MM1Z5235B
P4 6.46 6.8 7.14
20
5 750
MM1Z5236B
R4 7.13 7.5 7.88
20
6 500
MM1Z5237B
X4 7.79 8.2 8.61
20
8 500
MM1Z5239B
Y4 8.65 9.1 9.56
20
10 600
MM1Z5240B
Z4 9.50 10 10.50 20
17 600
MM1Z5241B
A5 10.45 11 11.50 20
22 600
MM1Z5242B
B5 11.40 12 12.60 20
30 600
MM1Z5243B
C5 12.35 13 13.65 9.5
13
600
MM1Z5245B
D5 14.25 15 15.75 8.5
16
600
MM1Z5246B
E5 15.20 16 16.80 7.8
17
600
MM1Z5248B F5 17.10 18 18.90 7.0 21 600
MM1Z5249B
K9 18.05 19 19.95 6.6
23
600
MM1Z5250B
H5 19.00 20 21.00 6.2
25
600
MM1Z5251B J5 20.90 22 23.10 5.6 29 600
MM1Z5252B
K5 22.80 24 25.20 5.2
33
600
MM1Z5253B
M9 23.75 25 26.25 5.0
35
600
MM1Z5254B
M5 25.65 27 28.35 4.6
41
600
MM1Z5256B
N5 28.50 30 31.50 4.2
49
600
MM1Z5257B
P5 31.35 33 34.65 3.8
58
700
MM1Z5258B
R5 34.20 36 37.80 3.4
70
700
MM1Z5259B
X5 37.05 39 40.95 3.2
80
800
MM1Z5260B
Y5 40.85 43 45.15 3.0
93
900
MM1Z5261B
Z5 44.65 47 49.35 2.7
105 1000
MM1Z5262B
A6 48.45 51 53.55 2.5
125 1100
MM1Z5263B
B6 53.20 56 58.80 2.2
150 1300
MM1Z5265B
C6 58.90 62 65.10 2.0
185 1400
MM1Z5266B
D6 64.60 68 71.40 1.8
230 1600
MM1Z5267B
E6 71.25 75 78.75 1.7
270 1700
Notes :
(1) VZ is tested with pulses (20 ms)
(2) Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30 °C ±1 °C
(3) ZZT and ZZK are measured by divice drop across the device by the AC current appliced.
The specified limits are for IZ(AC) = 0.1 IZ(DC) with the AC frequency 1 KHz
Test
Current
IZK
(mA)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Maximum Reverse
Leakage Current
IR @
VR
(μA) (V)
100 1.0
75 1.0
50 1.0
25 1.0
15 1.0
10 1.0
5 1.0
5 2.0
5 2.0
5 3.0
5 4.0
3 5.0
3 6.0
3 6.5
3 7.0
3 8.0
2 8.4
1 9.1
0.5 9.9
0.1 11
0.1 12
0.1 14
0.1 14
0.1 15
0.1 17
0.1 18
0.1 19
0.1 21
0.1 23
0.1 25
0.1 27
0.1 30
0.1 33
0.1 36
0.1 39
0.1 43
0.1 47
0.1 52
0.1 56
Page 2 of 2
Rev. 01 : May 29, 2008





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