3205TR

N-Channel MOSFETS DESCRIPTION The OGFD 3205TR is the N-Channel logic enhancement mode Power field effect transistors are produced using high cell density trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Applications witching Application Systems Inverter systems DC Motor Control 3205TR VDS 55V RDS(ON) ID 6.6mΩ 108A Ordering Information PART NUMBER PACKAGE BRAND 3205TR TO-220 OGFD www.goford.cn TEL：0755-86350980 FAX：0755-86350963 3205TR Absolute Maximum Ratings (TC=25℃, unless otherwise noted) Sym...