600V N-Channel MOSFET
600V N-Channel MOSFET GENERAL DESCRIPTION
This Power MOSFET is produced using advanced planar stripe DMOS technology.Thi...
Description
600V N-Channel MOSFET GENERAL DESCRIPTION
This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
12N60/12N60F
VDSS RDS(ON)
ID
600V 0.65Ω
12A
Features
12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V Low gate charge ( typical 52nC) Fast switching 100% avalanche tested Improved dv/dt capability
Ordering Information
PART NUMBER PACKAGE BRAND
12N60/12N60F TO-220/220F 0GFD
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12N60/12N60F
Absolute Maximum Ratings
TC = 25°Cunless otherwise noted
Symbol
Parameter
12N60
12N60F
VDSS ID
Drain-Source Voltage
Drain Current - Continuous (TC = 25°C) - Continuous (TC ...
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