KDF75N75P

POWER MOSFET Features  75V,80A N-Channel MOSFET  RDS(on)(typ.)=6.5mΩ@VGS=10V,ID=40A  High ruggedness  Fast switching  100% avalanche tested  Exceptional dv/dt capability Applications  Switching application KDF75N75P Absolute Maximum Ratings Symbol VDSS VGS ID IDM EAS PD TJ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃) Continuous Drain Current(TC=100℃) Pulsed Drain Current(Note 1 ) Single Pulsed Avalanche Energy(Note 2) Maximum Power Dissipation ( TC=25 ℃) Maximum Power Dissipation ( TC=100℃) Operating Junction Temperature Range Storage Temperature Range Value 75 +25 80 70 360 1200 300 150 -55 to +150 -55 to +150 Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2.Starting TJ=25℃,L=1.0mH,RG=25Ω,ID=37A,VGS=10V Units V V A A A mJ W W ℃ ℃ www.kedasemi.com -1Total 10 Pages Rev.1 Nov. 2011 KDF75N75P Thermal data Symbol Parameter Max. Rth J-C Thermal Resistance, Junc...