KDF9N90A

N-channel MOSFET Features  900V,9A  RDS(on)=1.05Ω @VGS=10V,ID=4.5A  High speed switching  High ruggedness  100% avalanche tested  Improved dv/dt capability General Description KDF9N90A is well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Absolute Maximum Ratings Symbol Parameter VDSS VGS ID IDM EAS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃ ) Pulsed Drain Current(Note 1 ) Single Pulsed Avalanche Energy(Note 2) dV/dt Peak Diode Recovery dv/dt(Note 3) Maximum Power Dissipation ( TC=25 ℃ ) PD Maximum Power Dissipation ( TC=100 ℃) TJ Operating Junction Temperature Range TSTG Storage Temperature Range Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Starting TJ=25℃,L=21mH,RG=50Ω ,ID=9A,VGS=10V 3. ISD≤9A, di/dt≤200A/us, VDD≤BVDSS. Starting TJ=25℃ Thermal data Symbol Parameter Rth J-C Rth J-A Thermal Res...