G40N03A

GOFORD N-Channel Enhancement Mode Power MOSFET Description The G40N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =40A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● SMPS and general purpose applications ● Hard switched and high frequency circuits ● Uninterruptible power supply G40N03A Schematic diagram G40N03A Marking and pin Assignment 100% UIS TESTED! DFN 3x3 EP top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (1...