MOSFET
GOFORD
Description
Features
VDSS RDS(ON)
@ 10V (typ) 200V 0.21Ω
ID
9A
• Fast switching • 100% avalanche tested • Imp...
Description
GOFORD
Description
Features
VDSS RDS(ON)
@ 10V (typ) 200V 0.21Ω
ID
9A
Fast switching 100% avalanche tested Improved dv/dt capability
Application
DC Motor Control and Class D Amplifier Uninterruptible Power Supply (UPS) Automotive
630A
TO-252
TO-251
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
ID
IDM EAS dv/dt
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current note1 Single Pulsed Avalanche Energy note2 Peak Diode Recovery Energy note3
TC = 25℃ TC = 100℃
Power Dissipation PD
Linear Derating Factor
TC = 25℃ TC > 25℃
RθJC Thermal Resistance, Junction to Case
TJ, TSTG
Operating and Storage Temperature Range
*Drain current limited by maximum junction temperature
Max. TO-251/TO-252
200 ± 30
9 5.83 36 320
5 83 0.67 1.5 -55 to +150
Units
V V A A A mJ V/ns W W/℃ ℃/W ℃
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GOFORD
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