G1007

GOFORD General Description The G1007. combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features VDSS 100V RDS(ON) @10V (typ) 70mΩ ID 7A ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Power switching application ● LED backlighting G1007. Schematic Diagram Marking and pin Assignment Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) PD EAS Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) Single Pulse Avalanche Energy (Note 2) TJ,TSTG Operating Junction and Storage Temperature Range Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS condition:TJ=25℃,VDD=50V,VG=10V, RG=25Ω ...