12N65

R SEMICONDUCTOR FEATURES ● RDS(ON)<0.85Ω@VGS=10V ● Fast switching capability ● Low gate charge ● Lead free in compliance with EU RoHS directive. MECHANICAL DATA ● Case:TO-220,ITO-220,TO-262,TO-263 Package 12N65 650V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 650 0.85 @ VGS=10V TO-220AB 12N65 ITO-220AB 12N65F ID (A) 12 Ordering Information Part No. 12N65-TU 12N65F-TU 12N65E-TU 12N65D-TU 12N65D-TR Package TO-220 ITO-220 TO-262 TO-263 TO-263 Packing 50pcs / Tube 50pcs / Tube 50pcs / Tube 50pcs / Tube 800pcs / 13"Reel 1 23 TO-262 12N65E 1 23 TO-263 12N65D Pin Definition: 1. Gate 2. Drain 3. Source 23 1 Block Diagram D G ABSOLUTE MAXIMUM RATINGS (TC=25 C , unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed(Note 3) SYMBOL VDSS VGSS ID IDM EAS RATINGS 650 ±30 12 48 790 UNIT V V A A mJ S Power Dissipation TO-220/TO-263/TO-262 IT...