650V N Channel Power MOSFET
R SEMICONDUCTOR
4N65 650V N-Channel Power MOSFET
FEATURES
● RDS(ON)<2.4Ω @ VGS=10V ● Fast switching capability ● Lead ...
Description
R SEMICONDUCTOR
4N65 650V N-Channel Power MOSFET
FEATURES
● RDS(ON)<2.4Ω @ VGS=10V ● Fast switching capability ● Lead free in compliance with EU RoHS directive. ● Green molding compound
MECHANICAL DATA
PRODUCT SUMMARY
V DS (V)
RDS(on) (Ω)
650 2.4 @ VGS =10V
TO-220AB
4N65
ITO-220AB
4N65F
ID (A)
4
TO-263
4N65D
● Case:TO-220,ITO-220,TO-251,TO-252, TO-262,TO-263 Package
23 1
Ordering Information
Part No.
Package
Packing
1 23
TO-262
4N65E
1 23
TO-251
4N65N
TO-252
4N65M
4N65-TU
TO-220
50pcs / Tube
4N65F-TU
ITO-220
50pcs / Tube
4N65E-TU
TO-262
50pcs / Tube
4N65D-TU 4N65D-TR 4N65N-TU 4N65M-TU 4N65M-TR
TO-263 TO-263 TO-251 TO-252
TO-252
50pcs / Tube 800pcs / 13"Reel 75pcs / Tube 75pcs / Tube
2.5Kpcs / 13"Reel
Pin Definition:
1. Gate 2. Drain 3. Source
Block Diagram
D
G
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 2) Avalanche Energy
(TC=25 C , unless otherwise specifi...
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