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YJG85G06A
N-Channel Enhancement Mode Field Effect Transistor
Description
YJG85G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect
Transistor
Product Summary ● VDS ● ID ● ID (Package limited) ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 60V 130A 85A ＜3.0 mohm ＜4.5 mohm General Description ● Split Gate Trench MOSFET technology ● Excellent package for heat dissipation ● High densit...
Yangzhou Yangjie
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YJG85G06A
N-Channel Enhancement Mode Field Effect Transistor
- Yangzhou Yangjie
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