YJS15G10B
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at ...
YJS15G10B
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect
Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested
100V
15A <9.5 mohm <12.5 mohm
General Description
● Low RDS(on) & FOM ● Extremely low switching loss ● Excellent stability and uniformity ● Fast switching and soft recovery
Applications
● Consumer electronic power supply ● Motor control ● Synchronous-rectification ● Isolated DC/DC convertor
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
Drain Current A Pulsed Drain Current B Avalanche energy C
TC=25℃ TC=25℃
Total Power Dissipation D
Tc=25℃ Tc=100℃
Thermal Resistance, junction-ambient E
Junction and Storage Temperature Range
■ Ordering Information (Example)
PREFERED P/N
PACKING CODE
Marking
VDS VGS ID IDM EAS
PD
RθJA TJ ,TSTG
100 ±20
15 64 130 4 1.6 3...