YJS15G10B

YJS15G10B RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 100V 15A ＜9.5 mohm ＜12.5 mohm General Description ● Low RDS(on) & FOM ● Extremely low switching loss ● Excellent stability and uniformity ● Fast switching and soft recovery Applications ● Consumer electronic power supply ● Motor control ● Synchronous-rectification ● Isolated DC/DC convertor ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current A Pulsed Drain Current B Avalanche energy C TC=25℃ TC=25℃ Total Power Dissipation D Tc=25℃ Tc=100℃ Thermal Resistance, junction-ambient E Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking VDS VGS ID IDM EAS PD RθJA TJ ,TSTG 100 ±20 15 64 130 4 1.6 3...