YJS12G06A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
●VDS ●ID(at VGS=10V) ...
YJS12G06A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect
Transistor
Product Summary
●VDS ●ID(at VGS=10V) ●RDS(ON)( at VGS=10V) ●RDS(ON)( at VGS=4.5V) ●100% UIS Tested
100% Rg Tested
100% ▽VDS Tested
60V 12A ＜9.0mΩ ＜13.0mΩ
Top View
General Description
●Split Gate Trench Power MV MOSFET technology ●Low RDS(ON) ●Low Gate Charge ●Optimized for fast-switching applications
Applications
●Synchronus Rectification in DC/DC and AC/DC
Converters
●Industrial and Motor Drive application
■Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-source Voltage
VDS
Gate-source Voltage
VGS
Drain Current G Pulsed Drain Current C
TC=25℃ TC=100℃
Avalanche energy L=0.5mH C
ID
IDM EAS
Power Dissipation A
TC=25℃ TC=100℃
Junction and Storage Temperature Range
Thermal Characteristics
PDSM TJ ,TSTG
Parameter
Junction-to-Ambient A Junction-to-Ambient A D
T≤10s Steady-State
Symbol
RθJA
Junction-to-Case
...
