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YJQ4666A Dataheets PDF



Part Number YJQ4666A
Manufacturers Yangzhou Yangjie
Logo Yangzhou Yangjie
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet YJQ4666A DatasheetYJQ4666A Datasheet (PDF)

YJQ4666A RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.8V) -20V -7A <26 mohm <34 mohm <55 mohm General Description ● Trench Power LV MOSFET technology ● Low RDS(ON) ● Low Gate Charge Applications ● Battery charge ● Load switching in Cellular handset ● Ultraportable applications ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Dra.

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YJQ4666A RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.8V) -20V -7A <26 mohm <34 mohm <55 mohm General Description ● Trench Power LV MOSFET technology ● Low RDS(ON) ● Low Gate Charge Applications ● Battery charge ● Load switching in Cellular handset ● Ultraportable applications ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient B Thermal Resistance Junction-to-Case Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking VDS VGS ID IDM PD RθJA RθJC TJ ,TSTG -20 ±10 -7 -5.6 -28 2.5 50 15 -55~+150 V V A A W ℃/ W ℃ MINIMUM PACKAGE(pcs) INNER BOX QUANTIT.


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