YJL3416A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
20V
● ID 6.0A
● ...
YJL3416A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect
Transistor
Product Summary
● VDS
20V
● ID 6.0A
● RDS(ON)( at VGS=4.5V)
＜18 mohm
● RDS(ON)( at VGS=2.5V)
＜22 mohm
● RDS(ON)( at VGS=1.8V)
＜39 mohm
● ESD Protected Up to 3.5KV (HBM)
General Description
● Trench Power LV MOSFET technology
● High Power and current handing capability
Applications
● PWM application
● Load switch
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
Drain Current Pulsed Drain Current A
TA=25℃ @ Steady State TA=70℃ @ Steady State
Total Power Dissipation @ TA=25℃
Thermal Resistance Junction-to-Ambient @ Steady State
Junction and Storage Temperature Range
■ Ordering Information (Example)
PREFERED P/N
PACKING CODE
Marking
VDS VGS
ID
IDM PD RθJA TJ ,TSTG
20 ±12 7.0 5.6
25 1.3 96 -55～+150
V V
A
A W ℃/ W ℃
MINIMUM PACKAGE(pcs)
INNER BOX QUANTITY(pcs)
...
