TSM650N15CR

TSM650N15CR Taiwan Semiconductor N-Channel Power MOSFET 150V, 24A, 65mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● PoE ● LED Lighting ● Telecom Power KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) VDS VGS = 10V VGS = 6V Qg 150 65 80 24 V mΩ nC PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy (Note 2) TC = 25°C TA = 25°C VDS VGS ID IDM IAS EAS 150 ±20 24 4 96 18 49 Total Power Dissipation TC = 25°C TC = 125°C Total Power Dissipation TA = 25°C TA = 125°C Op...