RM3

www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RM3 - RM3C SILICON RECTIFIER DIODES PRV : 400 - 1000 Volts Io : 2.5 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-0 rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.21 grams DO-201AD 0.209 (5.30) 0.189 (4.80) 0.050 (1.28) 0.048 (1.22) 1.00 (25.4) MIN. 0.374 (9.50) 0.283 (7.20) 1.00 (25.4) MIN. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Reverse Voltage Maximum Peak Reverse Surge Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current Half-cycle Sine wave, 50 Hz, Single Shot Maximum Forward Voltage at IF = 2.5 A Maximum Reverse Current Ta = 25 °C at VR = VRmax. Ta = 150°C Junction Temperature Range Storage Temperature Range SYMBOL VRM VRSM IF(AV) IFSM VF IR IR(H) TJ TSTG RM3 400 400 RM3B 800 800 2.5 RM3C 1000 1000 UNIT V V A 150 A 0.95 V 10 µA 100 µA - 40 to + 150 °C - 40 to + 150 °C Page 1 of 2 Rev. 04 : April 18, 2011 www.eicsem...