DatasheetsPDF.com

S-L2N7002DW1T1G Dataheets PDF



Part Number S-L2N7002DW1T1G
Manufacturers LRC
Logo LRC
Description Small Signal MOSFET
Datasheet S-L2N7002DW1T1G DatasheetS-L2N7002DW1T1G Datasheet (PDF)

L2N7002DW1T1G S-L2N7002DW1T1G Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● ESD Protected:1000V 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2N7002DW1T1G 702 3000/Tape&Reel L2N7002DW1T3G 702 10000/Tape&Reel .

  S-L2N7002DW1T1G   S-L2N7002DW1T1G


Document
L2N7002DW1T1G S-L2N7002DW1T1G Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● ESD Protected:1000V 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2N7002DW1T1G 702 3000/Tape&Reel L2N7002DW1T3G 702 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Current – ContinuousTC = 25°C TC = 100°C – Pulsed (Note 1) Gate–Source Voltage – Continuous – Non–repetitive (tp≤50μs) Symbol VDSS VDGR ID IDM VGS VGSM Limits 60 60 ±115 ±75 ±800 Unit Vdc Vdc mAdc ±20 Vdc ±40 Vdc 4. THERMAL CHARACTERISTICS Parameter Symbol Limits Unit Total Device Dissipation, PD 380 mW Per Device 250 FR−5 Board (Note 2) @ TA = 25.


1SS176 S-L2N7002DW1T1G TSH181


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)