Document
L2N7002DW1T1G
S-L2N7002DW1T1G
Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SC-88
1. FEATURES
● We declare that the material of product compliance with RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
● ESD Protected:1000V
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2N7002DW1T1G
702
3000/Tape&Reel
L2N7002DW1T3G 702 10000/Tape&Reel
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current – ContinuousTC = 25°C
TC = 100°C – Pulsed (Note 1) Gate–Source Voltage – Continuous – Non–repetitive (tp≤50μs)
Symbol VDSS VDGR
ID
IDM
VGS VGSM
Limits 60 60
±115 ±75 ±800
Unit Vdc Vdc mAdc
±20 Vdc ±40 Vdc
4. THERMAL CHARACTERISTICS
Parameter
Symbol Limits Unit
Total Device Dissipation,
PD 380 mW
Per Device
250
FR−5 Board (Note 2) @ TA = 25.